The role of the surface in transient enhanced diffusion

1995 ◽  
Vol 67 (16) ◽  
pp. 2302-2304 ◽  
Author(s):  
D. R. Lim ◽  
C. S. Rafferty ◽  
F. P. Klemens
Keyword(s):  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Investigation of Fluorine Effect on the Boron Diffusion by Mean of Boron Redistribution in Shallow Delta-doped Layers

2004 ◽  
Vol 810 ◽  
Author(s):  
A. Halimaoui ◽  
J. M. Hartmann ◽  
C. Laviron ◽  
R. El-Farhane ◽  
F. Laugier
Keyword(s):  
Point Defects ◽  
Depth Profiling ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Boron Doped ◽  
Transient Enhanced Diffusion ◽  
Sims Depth Profiling

ABSTRACTPreviously published articles have shown that co-implanted fluorine reduces transient enhanced diffusion of boron. However, it is not yet elucidated whether this effect is due to interaction of fluorine with point-defects or boron atoms. In this work, we have used boron redistribution in a shallow Delta-doped Si structures in order to get some insights into the role of fluorine in the boron diffusion. The structures consisted of 3 boron-doped layers separated by 40nm-thick undoped silicon. The samples were given to Ge preamorphization and F co-implant. SIMS depth profiling was used to analyse boron redistribution after annealing. The results we obtained strongly suggest that fluorine is not interacting with point-defects. The reduction in boron TED is most probably due to boron-fluorine interaction.

Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon

2000 ◽  
Vol 76 (7) ◽  
pp. 855-857 ◽  
Author(s):  
G. Mannino ◽  
N. E. B. Cowern ◽  
F. Roozeboom ◽  
J. G. M. van Berkum
Keyword(s):  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

On the role of nanocavities in suppressing boron transient enhanced diffusion and deactivation in F+ coimplanted silicon

2008 ◽  
Vol 103 (10) ◽  
pp. 103525
Author(s):  
Luis Felipe Giles ◽  
Chris Stapelmann ◽  
Hans Cerva ◽  
Franz Jahnel ◽  
Caroline Demeurisse ◽  
...  
Keyword(s):  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Transient enhanced diffusion of dopant in preamorphised Si: the role of EOR defects

1996 ◽  
pp. 222-226
Author(s):  
C. Bonafos ◽  
A. Martinez ◽  
M.M. Faye ◽  
C. Bergaud ◽  
D. Mathiot ◽  
...  
Keyword(s):  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

scholarly journals Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si

2004 ◽  
Vol 84 (11) ◽  
pp. 1862-1864 ◽  
Author(s):  
G. Impellizzeri ◽  
J. H. R. dos Santos ◽  
S. Mirabella ◽  
F. Priolo ◽  
E. Napolitani ◽  
...  
Keyword(s):  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

The Role of Vacancies and Interstitials in Transient Enhanced Diffusion of Arsenic Implanted into Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
D. Venables ◽  
V. Krishnamoorthy ◽  
H.- J. Gossmann ◽  
A. Lilak ◽  
K. S. Jones ◽  
...  
Keyword(s):  
Fermi Level ◽  
Point Defect ◽  
Boron Diffusion ◽  
Direct Role ◽  
Enhanced Diffusion ◽  
Projected Range ◽  
Transient Enhanced Diffusion ◽  
Diffusion Enhancement ◽  
Recombination Centers

ABSTRACTBoron and antimony doped superlattices (DSLs) were implanted with arsenic at 40 keV to doses of 2×1014 cm−2, 5×1015 cm−2 and 2×1016 cm−2. Increasing the arsenic dose above 5×1015 cm−2 resulted in a reduction in the extent of arsenic transient enhanced diffusion (TED) following annealing at 700°C, 16 hr. Concurrent with this reduction in TED was a reduction in the number of free interstitials beyond the end-of-range, as measured by the boron diffusion enhancement in the doped superlattices. No enhancement in antimony diffusivity was observed in this region, indicating that vacancies play no direct role in the diffusion of arsenic in this region, although an indirect role for vacancies as recombination centers for mobile interstitials is not precluded by these experiments. We conclude that interstitials dominate arsenic diffusion in the end-of-range region and beyond. Interpretation of the DSL data in the projected range region is complicated by Fermi level and segregation effects and no definitive conclusion can be reached about the point defect populations in this region.

Transient Enhanced Diffusion of Arsenic by Self-Implantation —The role of As-I clusters—

2000 ◽  
Vol 610 ◽  
Author(s):  
Ryangsu Kim ◽  
Takenori Aoki ◽  
Yoshikazu Furuta ◽  
Hiroyuki Kobyashi ◽  
Jianxin Xia ◽  
...  
Keyword(s):  
Implantation Dose ◽  
Experimental Results ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Initial Stage ◽  
Interstitial Atoms ◽  
Conventional Models ◽  
Silicon Implantation

AbstractTransient enhanced diffusion of implanted arsenic in silicon with/without additional self-implantation has been investigated. The experimental results show the suppression of As diffusion with Si self-implantation during initial stage of annealing in contrast to the prediction of conventional models. The results suggest that the arsenic and self-interstitial atoms might form immobile clusters during Si implantation or initial stage of annealing. After the clusters dissolve for further annealing, the transient enhanced diffusion of As increases with silicon implantation dose as expected from the “+1” model. These results clarify that interstitials/ As-I clusters play a major role in transient arsenic diffusion.

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