Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO2

1995 ◽  
Vol 67 (15) ◽  
pp. 2179-2181 ◽  
Author(s):  
John F. Conley ◽  
Patrick M. Lenahan ◽  
Aivars J. Lelis ◽  
Timothy R. Oldham
Keyword(s):  
Electron Spin Resonance ◽  
Structural Change ◽  
Electron Spin ◽  
Dangling Bond ◽  
Spin Resonance ◽  
Oxide Trap

Defect and Tail States in Microcrystalline Silicon investigated by pulsed ESR

2000 ◽  
Vol 609 ◽  
Author(s):  
P. Kanschat ◽  
H. Mell ◽  
K. Lips ◽  
W. Fuhs
Keyword(s):  
Electron Spin Resonance ◽  
Detailed Analysis ◽  
Electron Spin ◽  
Qualitative Model ◽  
Dangling Bond ◽  
Microcrystalline Silicon ◽  
Band Tail ◽  
Spin Resonance ◽  
Donor States ◽  
Broad Structure

ABSTRACTWe report on a detailed analysis of paramagnetic states in a doping series of microcrystalline silicon, μc-Si:H, by pulsed electron spin resonance. We identify two dangling bond like structures at g = 2.0052 (db1) and g = 2.0043 (db2). Whereas db1 is evenly distributed in the gap, the db2 state is found to be localized in the lower part of the gap. The CE resonance at g ≈ 1.998 is assigned to electrons in conduction band tail states. In p-doped samples, we observe a broad structure CH at g ≈ 2.08 which we identify with holes trapped in valence band tail states. It is shown that the CH state behaves very similar on illumination as the CE resonance. In n-type samples a pair of hyperfine split lines (A ≈ 11 mT) is found which apparently does not originate from 31P-donor states. On the basis of our results we propose a qualitative model for paramagnetic states in μc-Si:H.

Electron Spin Resonance Study of the Dangling Bond in a-Si:H and Porous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
T.J. Mc Mahon ◽  
Y. Xiao
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Electrochemical Etching ◽  
Bond Line ◽  
Electron Spin Resonance Study ◽  
Dangling Bond ◽  
Porous Si ◽  
Spin Resonance ◽  
G Value

We compare the electron spin resonance (ESR) signal of the dangling bond in porous silicon films, produced by electrochemical etching, to the ESR signal from hydrogenated amorphous Si (a-Si:H). The anisotropy of the ESR signal in porous Si showed g values varying as for the Pb Si/SiO2 interface dangling bond. The g value varies from g|| − 2.0020 to gL − 2.0080 with an inhomogeneously broadened line width increasing from 1.8 to 3.8 G. A porous Si ESR powder line, with superhyperfine and strain broadening intrinsic to porous Si, is compared to the a−Si:H dangling bond line. The result is more inhomogeneous broadening of line widths parallel and perpendicular to the dangling bond axis in a-Si:H, and less anisotropy in g|| − gL- No evidence was seen for light-induced metastability on a H-passivated porous Si film.

First-principles investigation of the electron spin resonance parameters of germanium interfacial dangling bond centers

2009 ◽  
Vol 94 (18) ◽  
pp. 184103 ◽  
Author(s):  
K. Sankaran ◽  
G. Pourtois ◽  
M. Houssa ◽  
A. Stesmans ◽  
M. Caymax ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
First Principles ◽  
Dangling Bond ◽  
Resonance Parameters ◽  
Spin Resonance

Light-Induced Structural Change in Iridium Complexes Studied by Electron Spin Resonance

2014 ◽  
Vol 118 (21) ◽  
pp. 3717-3725 ◽  
Author(s):  
A. Batagin-Neto ◽  
A. P. Assis ◽  
J. F. Lima ◽  
C. J. Magon ◽  
L. Yan ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Structural Change ◽  
Electron Spin ◽  
Iridium Complexes ◽  
Spin Resonance

Characterization of the Pb1 Interface Defect in Thermal (100)Si/SiO2 by Electron Spin Resonance: 29Si Hyperfine Structure and Electrical Relevance

1999 ◽  
Vol 592 ◽  
Author(s):  
A. L. Stesmans
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Device Performance ◽  
Dangling Bond ◽  
Electrical Measurements ◽  
Characteristic Appearance ◽  
Interface Defect ◽  
Spin Resonance ◽  
Theoretical Insight

ABSTRACTOptimized electron spin resonance investigation resulted in the observation of the fuill angular dependence of the hyperfine (hi) spectra of the Pb1 interface defect in thermal (100)Si/SiO2, showing that the dominant hf interaction of the associated unpaired electron arises from a single Si site. The defect is identified as a prototype Si dangling bond defect with, much remarkably, the unpaired sp3-orbital pointing closely along a <211> direction at 35.26° with the [100] interface normal. If O is excluded as an immediate part of the defect, the key part of the Pb1 defect is uncovered as a tilted Si3≡Si unit. The incorporation of this defect kernel into a larger defect structure is analyzed within the framework of theoretical insight, suggesting the moiety to be part of a strained interfacial Si-Si dimer. ESR has been combined with electrical measurements to monitor the defect's behavior under thermal treatment, including postoxidation annealing in various ambients. No electrical activity of Pb1 as a detrimental interface trap could be traced, suggesting the defect to be of little relevance for device performance. The results are reviewed and discussed in the light of the defect's characteristic appearance at the (100)Si/SiO2 interface.

Photoluminescence and ESR study of Si1−xGex alloy nanocrystals

2000 ◽  
Vol 638 ◽  
Author(s):  
K. Toshikiyo ◽  
M. Tokunaga ◽  
S. Takeoka ◽  
M. Fujii ◽  
S. Hayashi
Keyword(s):  
Thin Films ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Radiative Recombination ◽  
Dangling Bond ◽  
Dangling Bonds ◽  
Alloy Nanocrystals ◽  
Esr Spectrum ◽  
Spin Resonance ◽  
Recombination Centers

AbstractDangling bond defects in Si1−xGex alloy nanocrystals (nc-Si1−xGex) as small as 4 nm in diameter embedded in SiO2 thin films were studied by electron spin resonance (ESR), and the effects of the defects on photoluminescence (PL) properties were discussed. It was found that the ESR spectrum is a superposition of signals from Si and Ge dangling bonds at the interfaces between nc-Si1−xGex and SiO2 matrices (Si and Ge Pb centers). As Ge concentration increased, the intensity of the signal from the Ge Pb centers increased, while that from the Si Pb centers was almost independent of Ge concentration. The increase in the number of Ge Pb centers was accompanied by strong quenching of the PL. The observed correlation between the two measurements suggests that Ge Pb centers act as efficient non-radiative recombination centers for photogenerated carriers, resulting in the quenching of the PL.

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