Heteroepitaxial growth of highly conductive metal oxide RuO2 thin films by pulsed laser deposition

1995 ◽  
Vol 67 (12) ◽  
pp. 1677-1679 ◽  
Author(s):  
Q. X. Jia ◽  
X. D. Wu ◽  
S. R. Foltyn ◽  
A. T. Findikoglu ◽  
P. Tiwari ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Oxide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Heteroepitaxial Growth

Homoepitaxial and Heteroepitaxial Growth of Sr0.61Ba0.39Nb2O6 Thin Films by Pulsed Laser Deposition

1995 ◽  
Vol 401 ◽  
Author(s):  
J. S. Yeo ◽  
K. E. Youden ◽  
T. F. Huang ◽  
L. Hesselink ◽  
J. S. Harris
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Optical Loss ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
Sharp Transition ◽  
Transition Band ◽  
High Resolution Tem ◽  
Plane View

AbstractEpitaxial SBN:61 films have been grown on SBN:75 and MgO substrates by pulsed laser deposition. The optical loss due to absorption is greatly reduced by increasing the oxygen pressure to 1 mbar during the cooling process. In homoepitaxy, X-ray phi scans on the (221) plane of the SBN:61 films indicate that the in-plane grains are rotated 0° or ±28° with respect to single crystalline SBN:75 substrates. Cross-section and plane view high resolution TEM reveals this crystalline relations and microstructure of SBN thin films. Pr doped SBN:61 thin films show sharp transition band at 495 nm and 607 nm in room temperature photoluminescence measurement.

scholarly journals Combined pulsed laser deposition and non-contact atomic force microscopy system for studies of insulator metal oxide thin films

2018 ◽  
Vol 9 ◽  
pp. 686-692 ◽  
Author(s):  
Daiki Katsube ◽  
Hayato Yamashita ◽  
Satoshi Abo ◽  
Masayuki Abe
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Metal Oxide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
Combined System ◽  
Force Microscopy ◽  
Atomic Force

We have designed and developed a combined system of pulsed laser deposition (PLD) and non-contact atomic force microscopy (NC-AFM) for observations of insulator metal oxide surfaces. With this system, the long-period iterations of sputtering and annealing used in conventional methods for preparing a metal oxide film surface are not required. The performance of the combined system is demonstrated for the preparation and high-resolution NC-AFM imaging of atomically flat thin films of anatase TiO2(001) and LaAlO3(100).

Room-Temperature Heteroepitaxial Growth of NiO Thin Films using Pulsed Laser Deposition

2000 ◽  
Vol 39 (Part 1, No. 4A) ◽  
pp. 1817-1820 ◽  
Author(s):  
Minoru Tachiki ◽  
Takeshi Hosomi ◽  
Takeshi Kobayashi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Heteroepitaxial Growth

Vapour–liquid–solid-like growth of high-quality and uniform 3C–SiC heteroepitaxial films on α-Al2O3(0001) substrates

CrystEngComm ◽  
2021 ◽  
Author(s):  
Naoki Sannodo ◽  
Asuka Osumi ◽  
Kenichi Kaminaga ◽  
Shingo Maruyama ◽  
Yuji Matsumoto
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Beam Deflection ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
Α Al2o3

We employ our pulsed laser deposition system with rapid beam deflection to demonstrate the heteroepitaxial growth of 3C–SiC thin films by a vapour–liquid–solid-like mechanism by alternating deposition of SiC and NiSi2 flux in nanoscale.

scholarly journals Heteroepitaxial Growth of Perovskite CaTaO2N Thin Films by Nitrogen Plasma-Assisted Pulsed Laser Deposition

2013 ◽  
Vol 14 (1) ◽  
pp. 87-90 ◽  
Author(s):  
Daichi Oka ◽  
Yasushi Hirose ◽  
Tomoteru Fukumura ◽  
Tetsuya Hasegawa
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Laser Deposition ◽  
Heteroepitaxial Growth
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