Comparison of one‐photon and two‐photon effects in the photosensitivity of germanium‐doped silica optical fibers exposed to intense ArF excimer laser pulses

1995 ◽  
Vol 67 (24) ◽  
pp. 3529-3531 ◽  
Author(s):  
J. Albert ◽  
B. Malo ◽  
K. O. Hill ◽  
F. Bilodeau ◽  
D. C. Johnson ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Optical Fibers ◽  
Laser Pulses ◽  
Two Photon ◽  
Arf Excimer Laser

ArF Excimer Laser Micromachining of MEMS Materials: Characterization and Applications

2014 ◽  
Vol 2 (2) ◽  
Author(s):  
Kewei Liu ◽  
Yoontae Kim ◽  
Hongseok (Moses) Noh
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Laser Pulses ◽  
Laser Micromachining ◽  
Laser Frequency ◽  
Excimer Laser Ablation ◽  
Characterization Study ◽  
Arf Excimer Laser ◽  
Etch Rates ◽  
Krf Excimer Laser

Excimer laser ablation is a versatile technique that can be used for a variety of different materials. Excimer laser ablation overcomes limitations of conventional two-dimensional (2D) microfabrication techniques and facilitates three-dimensional (3D) micromanufacturing. Previously, we have reported a characterization study on 248 nm KrF excimer laser micromachining. This paper extends the study to 193 nm ArF excimer laser micromachining on five representative micro-electro-mechanical systems (MEMS) materials (Si, soda-lime glass, SU-8, polydimethylsiloxane (PDMS), and polyimide). Relations between laser parameters (fluence, frequency and number of laser pulses) and etch performances (etch rates, aspect ratio, and surface quality) were investigated. Etch rate per shot was proportional to laser fluence but inversely proportional to number of laser pulses. Laser frequency did not show a notable impact on etch rates. Aspect ratio was also proportional to laser fluence and number of laser pulses but was not affected by laser frequency. Materials absorbance spectrum was found to have important influence on etch rates. Thermal modeling was conducted as well using numerical simulation to investigate how the photothermal ablation mechanism affects the etching results. Thermal properties of material, primarily thermal conductivity, were proved to have significant influence on etching results. Physical deformation in laser machined sites was also investigated using scanning electron microscopy (SEM) imaging. Element composition of redeposited materials around ablation site was analyzed using energy dispersive x-ray spectroscopy (EDXS) analysis. Combined with our previous report on KrF excimer laser micromachining, this comprehensive characterization study provides guidelines to identify optimized laser ablation parameters for desired microscale structures on MEMS materials. In order to demonstrate the 3D microfabrication capability of ArF excimer laser, cutting and local removal of insulation for a novel floating braided neural probe made of polyimide and nichrome was conducted successfully using the optimized laser ablation parameters obtained in the current study.

Thermal decay of ArF-excimer-laser fabricated fiber Bragg gratings in Bi-Al-doped optical fibers

2012 ◽  
Author(s):  
Pouneh Saffari ◽  
Georgios Violakis ◽  
Hans G. Limberger ◽  
Valery M. Mashinsky ◽  
Evgeny M. Dianov
Keyword(s):  
Excimer Laser ◽  
Optical Fibers ◽  
Fiber Bragg Gratings ◽  
Bragg Gratings ◽  
Thermal Decay ◽  
Arf Excimer Laser

A Comparison of the Gas Phase Processes Resulting from SiH4 and Si2H6 Photodissociation with a Pulsed ArF Excimer Laser

1988 ◽  
Vol 129 ◽  
Author(s):  
E. Boch ◽  
C. Fuchs ◽  
E. Fogarassy ◽  
P. Siffert
Keyword(s):  
Gas Phase ◽  
Excimer Laser ◽  
Laser Energy ◽  
Initial Pressure ◽  
Laser Pulses ◽  
Photon Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Deposition Yield ◽  
193 Nm

ABSTRACTWe present in this paper a comparison of the photodissociation processes of SiH4 and Si2H6 under pulsed excimer laser at 193 nm. The experimental curves of the gas composition as a function of laser energy density show that the dissociation of Si2H6 results from both one and two-photon absorption whereas SiH4 only absorbs two photons. The deposition yield of Si2H6 has also been determined as a function of the number of laser pulses or initial pressure. These experimental results show the establishment of a stationary state in the gas phase and prove the existence of reverse reactions in the disilane kinetic model. The photodissociation of Si2H6 under UV laser excitation (193 nm) presents, therefore, similar properties to those of SiH4.

scholarly journals Photosensitivity and stress changes of Ge-free Bi-Al doped silica optical fibers under ArF excimer laser irradiation

2011 ◽  
Vol 19 (27) ◽  
pp. 26859 ◽  
Author(s):  
Christian Ban ◽  
Hans G. Limberger ◽  
Valery Mashinsky ◽  
Evgeny Dianov
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Optical Fibers ◽  
Stress Changes ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser

Performance of optical fibers for transmission of high-peak-power XeCl excimer laser pulses

2003 ◽  
Vol 77 (4) ◽  
pp. 441-445 ◽  
Author(s):  
R.F. Delmdahl ◽  
G. Spiecker ◽  
H. Dietz ◽  
M. Rütting ◽  
G. Hillrichs ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Optical Fibers ◽  
Peak Power ◽  
Laser Pulses ◽  
High Peak ◽  
High Peak Power ◽  
Xecl Excimer Laser
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