scholarly journals Transmission of XeCl excimer laser pulses through optical fibers: Dependence on fiber and laser parameters

1992 ◽  
Vol 54 (3) ◽  
pp. 208-215 ◽  
Author(s):  
G. Hillrichs ◽  
M. Dressel ◽  
H. Hack ◽  
R. Kunstmann ◽  
W. Neu
Keyword(s):  
Excimer Laser ◽  
Optical Fibers ◽  
Laser Pulses ◽  
Laser Parameters ◽  
Xecl Excimer Laser

Performance of optical fibers for transmission of high-peak-power XeCl excimer laser pulses

2003 ◽  
Vol 77 (4) ◽  
pp. 441-445 ◽  
Author(s):  
R.F. Delmdahl ◽  
G. Spiecker ◽  
H. Dietz ◽  
M. Rütting ◽  
G. Hillrichs ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Optical Fibers ◽  
Peak Power ◽  
Laser Pulses ◽  
High Peak ◽  
High Peak Power ◽  
Xecl Excimer Laser

Etch Performance of KRF Excimer Laser Micromachining Characterization on Silicon Material

2015 ◽  
Vol 780 ◽  
pp. 29-32 ◽  
Author(s):  
M.Z. Zainol ◽  
Yufridin Wahab ◽  
H. Fazmir ◽  
A.F.M. Anuar ◽  
S. Johari ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Etch Rate ◽  
Three Dimensional ◽  
Laser Pulses ◽  
Laser Micromachining ◽  
Rate Change ◽  
Performance Parameters ◽  
Laser Parameters ◽  
Characterization Study ◽  
Krf Excimer Laser

Excimer laser micromachining enables us to overcome the conventional lithography-based microfabrication limitations and simplify the process of creating three dimensional (3D) microstructures.The objective of this study is to investigate the relation between the number of laser pulses, number of laser passes through the channel of ablation site and their etch performance. Parameters such as frequency, fluence and velocity were retained as constants. In this paper, we present a parametric characterization study on silicon using KrF excimer laser micromachining. From the result, the etch rate change were recorded as the two major laser parameters (Number of laser pulses and number of laser passes) were varied. Both parameters were showing declination profile however from comparing both graphs, it showed that etch rate dropped more steeply when varied number of laser passes rather than number of pulses.

A New Post Annealing Method for AlGaN/GaN Heterostructure Field-Effect Transistors Employing XeCl Excimer Laser Pulses

2005 ◽  
Vol 864 ◽  
Author(s):  
Min-Woo Ha ◽  
Seung-Chul Lee ◽  
Joong-Hyun Park ◽  
Kwang-Seok Seo ◽  
Min-Koo Han
Keyword(s):  
Excimer Laser ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Laser Pulses ◽  
Heat Diffusion ◽  
Post Annealing ◽  
Gan Hfet ◽  
Gan Heterostructure ◽  
Annealing Method ◽  
Xecl Excimer Laser

AbstractA new post annealing method employing excimer laser pulses is proposed to improve the transfer characteristics and the breakdown voltage of the unpassivated AlGaN/GaN heterostructure field-effect transistor (HFET) and the passivated one. The XeCl excimer laser pulses with wavelength of 308 nm anneal the AlGaN/GaN HFET after the Schottky gate metallization. The interface defects between the Schottky gate metal and a GaN layer is decreased by the lateral heat diffusion of the laser pulses. Our experimental results show that the drain current and the maximum transconductance of the unpassivated AlGaN/GaN HFET after laser pulses annealing are 496 mA/mm and 134 mS/mm while a virgin device shows 434 mA/mm and 113 mS/mm, respectively. The proposed method anneals effectively the SiO2 passivated AlGaN/GaN HFET and the leakage current of the passivated device is decreased from 483 nA to 29 nA.

Ablation of Hard Biological Tissue: Dependence on XeCl Excimer Laser Parameters

1994 ◽  
pp. 303-305
Author(s):  
W. Neu ◽  
G. Hillrichs ◽  
R. Jahn ◽  
K. H. Jungbluth ◽  
B. Tschirner
Keyword(s):  
Excimer Laser ◽  
Biological Tissue ◽  
Laser Parameters ◽  
Xecl Excimer Laser

Reflectance and crystallinity of silicon solar cells with LIPSS produced by XeCl excimer laser pulses

2020 ◽  
Vol 126 (2) ◽  
Author(s):  
Fumitaka Nigo ◽  
Masaki Hashida ◽  
Masahiro Tsukamoto ◽  
Shuji Sakabe ◽  
Mitsuhiro Kusaba
Keyword(s):  
Solar Cells ◽  
Excimer Laser ◽  
Laser Pulses ◽  
Silicon Solar Cells ◽  
Xecl Excimer Laser

Comparison of one‐photon and two‐photon effects in the photosensitivity of germanium‐doped silica optical fibers exposed to intense ArF excimer laser pulses

1995 ◽  
Vol 67 (24) ◽  
pp. 3529-3531 ◽  
Author(s):  
J. Albert ◽  
B. Malo ◽  
K. O. Hill ◽  
F. Bilodeau ◽  
D. C. Johnson ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Optical Fibers ◽  
Laser Pulses ◽  
Two Photon ◽  
Arf Excimer Laser

The generation of laser shock waves in a water-confinement regime with 50 ns and 150 ns XeCl excimer laser pulses

2000 ◽  
Vol 33 (17) ◽  
pp. 2142-2145 ◽  
Author(s):  
L Berthe ◽  
A Sollier ◽  
P Peyre ◽  
R Fabbro ◽  
E Bartnicki
Keyword(s):  
Shock Waves ◽  
Excimer Laser ◽  
Laser Pulses ◽  
Laser Shock ◽  
Xecl Excimer Laser

Poly-Silicon TFT Annealing with XeCl Excimer Laser.

2000 ◽  
Vol 28 (1) ◽  
pp. 24-28 ◽  
Author(s):  
Junichi SHIDA ◽  
Naoyuki KOBAYASHI ◽  
Hideaki KUSAMA
Keyword(s):  
Excimer Laser ◽  
Poly Silicon ◽  
Xecl Excimer Laser

Laser shock processing with 20 MW laser pulses delivered by optical fibers

2000 ◽  
Vol 9 (3) ◽  
pp. 235-238 ◽  
Author(s):  
T. Schmidt-Uhlig ◽  
P. Karlitschek ◽  
M. Yoda ◽  
Y. Sano ◽  
G. Marowsky
Keyword(s):  
Optical Fibers ◽  
Laser Pulses ◽  
Laser Shock ◽  
Laser Shock Processing ◽  
Shock Processing
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