Fast thickness profile measurement of a thin film by using a line scan charge coupled device camera

1997 ◽  
Vol 68 (12) ◽  
pp. 4525-4530 ◽  
Author(s):  
N. Y. Liang ◽  
C. K. Chan
2008 ◽  
Vol 46 (2) ◽  
pp. 179-184 ◽  
Author(s):  
Young-Min Hwang ◽  
Sung-Won Yoon ◽  
Jung-Hwan Kim ◽  
Souk Kim ◽  
Heui-Jae Pahk

2013 ◽  
Vol 24 (7) ◽  
pp. 075002 ◽  
Author(s):  
Young-Sik Ghim ◽  
Hyug-Gyo Rhee ◽  
Ho-Soon Yang ◽  
Yun-Woo Lee

2008 ◽  
Vol 381-382 ◽  
pp. 407-410
Author(s):  
Shu Jie Liu ◽  
K. Watanabe ◽  
Satoru Takahashi ◽  
Kiyoshi Takamasu

In the semiconductor industry, a device that can measure the surface-profile of photoresist is needed. Since the photoresist surface is very smooth and deformable, the device is required to measure vertical direction with nanometer resolution and not to damage it at the measurement. We developed the apparatus using multi-cantilever and white light interferometer to measure the surface-profile of thin film. But, this system with scanning method suffers from the presence of moving stage and systematic sensor errors. So, in this paper, an error separation approach used coupled distance sensors, together with an autocollimator as an additional angle measuring device, was consulted the potentiality for self-calibration of multi-cantilever. Then, according to this method, we constructed the experimental apparatus and do the measurement on the resist film. The results demonstrated the feasibility that the constructed multi-ball-cantilever AFM system combined with an autocollimator could measure the thin film with high accuracy.


2020 ◽  
Vol 143 (4) ◽  
Author(s):  
Xiangyu Guo ◽  
ChaBum Lee

Abstract This paper presents a novel thickness profile measuring system that measures double-sided thin pipe wall surfaces in a non-contact, continuous, cosine error-free, and fast manner. The surface metrology tool path was developed to align the displacement sensors always normal to the double-sided surfaces to remove cosine error. A pair of capacitive-type sensors that were placed on the rotary and linear axes simultaneously scans the inner and outer surfaces of thin walls. Because the rotational error of the rotary axis can severely affect the accuracy in thickness profile measurement, such error was initially characterized by a reversal method. It was compensated for along the rotational direction while measuring the measurement target. Two measurement targets (circular and elliptical metal pipe-type thin walls) were prepared to validate the developed measurement method and system. Not only inner and outer surface profiles but also thin-wall thickness profiles were measured simultaneously. Based on the output data, the circularity and wall thickness variation were calculated. The thickness profile results showed a good agreement with those obtained by a contact-type micrometer (1-µm resolution) at every 6-deg interval. The uncertainty budget for this measuring system with metrology tool path planning was estimated at approximately 1.4 µm.


1981 ◽  
Vol 103 (2) ◽  
pp. 325-330 ◽  
Author(s):  
R. Cook ◽  
C. Y. Tung ◽  
P. C. Wayner

A scanning microphotometer was used to measure in situ the profile of an evaporating decane meniscus in the contact line region on a smooth inclined silicon substrate as a function of the evaporative heat flux. The use of this new experimental design to determine the effect of heat flux on the profile in the contact line region is discussed. The results support the hypothesis that fluid flow in the contact line region of an evaporating thin film results from a change in the thin film thickness profile.


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