Large second‐order optical nonlinearities in pulsed laser ablated silicon carbide thin films

1995 ◽  
Vol 67 (20) ◽  
pp. 2919-2921 ◽  
Author(s):  
P. M. Lundquist ◽  
H. C. Ong ◽  
W. P. Lin ◽  
R. P. H. Chang ◽  
J. B. Ketterson ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Pulsed Laser ◽  
Second Order ◽  
Optical Nonlinearities

scholarly journals The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition

2021 ◽  
Vol 9 (2) ◽  
pp. 46-50
Author(s):  
Muhanad A. Ahmed ◽  
Mohammed F. Mohammed Sabri ◽  
Wathiq R. Abed
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Absorption Coefficient ◽  
Pulsed Laser Deposition ◽  
Extinction Coefficient ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cutoff Wavelength ◽  
Nanostructured Silicon

In this paper, nanostructured silicon carbide (SiC) thin films are deposited onto glass substrate using pulsed laser deposition technique. Electrical and optical characterizations such as conductivity, resistivity, transmission, Seeback effect, absorption, absorption coefficient, energy band gap, and extinction coefficient as a function of photon energy, and the effect of thin films thickness on transmission are carried out to characterize the prepared samples. Results showed that the prepared SiC thin film is an n-type semiconductor with an indirect bandgap of ~3 eV, 448 nm cutoff wavelength, 3.4395 × 104 cm−1 absorption coefficient and 0.154 extinction coefficient. The surface morphology of the SiC thin films is studied using scanning electron microscope at a substrate temperature of 400 °C and it is found that the grain size of the prepared SiC thin film is about 30 nm. As such, the nano thin films optical and structural characteristics enable the films to be used as gases sensors in many optoelectronic devices such as the environment and ultraviolet photodiode.

Second order optical nonlinearities of radio frequency sputter‐deposited AlN thin films

1993 ◽  
Vol 63 (21) ◽  
pp. 2875-2877 ◽  
Author(s):  
W. P. Lin ◽  
P. M. Lundquist ◽  
G. K. Wong ◽  
E. D. Rippert ◽  
J. B. Ketterson
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Second Order ◽  
Optical Nonlinearities ◽  
Sputter Deposited

Preparation of Silicon Carbide Nano-Particles Using a Pulsed Laser Deposition Method

2004 ◽  
Vol 818 ◽  
Author(s):  
H. Kawasaki ◽  
Y. Suda ◽  
T. Ohshima ◽  
T. Ueda ◽  
S. Nakashima
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Pulsed Laser Deposition ◽  
Nd:Yag Laser ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Nano Particles ◽  
Laser Deposition ◽  
Laser Beams ◽  
Silicon Carbon

AbstractWe have developed a new pulsed laser deposition technique using two Nd:YAG laser beams for the nucleation of silicon carbide (SiC) crystalline nano-particles and single crystalline SiC thin films. Transmission electron microscopy and atomic force microscopy observation suggest that several nanometer size SiC particles can be prepared by the new pulsed laser deposition (PLD) method using two Nd:YAG laser beams (1064nm and 532nm). X ray photoelectron spectroscopy measurements suggest that the silicon/carbon composition ratio of the prepared SiC thin films can be controlled by laser fluence and wavelength.

Crystallization of silicon carbide thin films by pulsed laser irradiation

1996 ◽  
Vol 106 ◽  
pp. 193-197 ◽  
Author(s):  
G. De Cesare ◽  
S. La Monica ◽  
G. Maiello ◽  
G. Masini ◽  
E. Proverbio ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation

Large third-order optical nonlinearities in iron oxide thin films synthesized by reactive pulsed laser deposition

2016 ◽  
Vol 60 ◽  
pp. 123-127 ◽  
Author(s):  
S.A. Mulenko ◽  
V.I. Rudenko ◽  
V.R. Liakhovetskyi ◽  
A.M. Brodin ◽  
N. Stefan
Keyword(s):  
Thin Films ◽  
Iron Oxide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Optical Nonlinearities ◽  
Oxide Thin Films ◽  
Third Order

Laser Assisted Doping of Silicon Carbide Thin Films Grown by Pulsed Laser Deposition

2019 ◽  
Vol 48 (6) ◽  
pp. 3468-3478 ◽  
Author(s):  
Emmanuel Paneerselvam ◽  
Vinoth Kumar Lakshmi Narayanan ◽  
Nilesh J. Vasa ◽  
Mitsuhiro Higashihata ◽  
Daisuke Nakamura ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Pulsed laser deposition of hydroxylapatite thin films on biomorphic silicon carbide ceramics

2005 ◽  
Vol 248 (1-4) ◽  
pp. 355-359 ◽  
Author(s):  
J.P. Borrajo ◽  
J. Serra ◽  
S. Liste ◽  
P. González ◽  
S. Chiussi ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

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