Effect of deposition temperature on the optical transmission and paramagnetic centers in pulsed laser deposited amorphous silicon carbide thin films

2000 ◽  
Vol 88 (9) ◽  
pp. 5127-5133 ◽  
Author(s):  
M. Tabbal ◽  
S. Isber ◽  
T. C. Christidis ◽  
M. A. El Khakani ◽  
M. Chaker
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Optical Transmission ◽  
Pulsed Laser ◽  
Paramagnetic Centers ◽  
Amorphous Silicon Carbide

Effect of deposition temperature on the properties of amorphous silicon carbide thin films

2006 ◽  
Vol 515 (2) ◽  
pp. 651-653 ◽  
Author(s):  
J. Huran ◽  
I. Hotový ◽  
J. Pezoltd ◽  
N.I. Balalykin ◽  
A.P. Kobzev
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Amorphous Silicon Carbide

Structural relaxation of amorphous silicon carbide thin films in thermal annealing

2008 ◽  
Vol 516 (12) ◽  
pp. 3855-3861 ◽  
Author(s):  
Kun Xue ◽  
Li-Sha Niu ◽  
Hui-Ji Shi ◽  
Jiwen Liu
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Structural Relaxation ◽  
Amorphous Silicon Carbide

Luminescent amorphous silicon carbide ultrafine nanoparticles fabricated by pulsed-laser ablation

2017 ◽  
Vol 123 (4) ◽  
Author(s):  
Jun Zhu ◽  
Shan Hu ◽  
Wei Wang ◽  
Wei-wei Xia ◽  
Hai-tao Chen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Amorphous Silicon ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Amorphous Silicon Carbide

Silicon nanocrystals on amorphous silicon carbide alloy thin films: Control of film properties and nanocrystals growth

2012 ◽  
Vol 522 ◽  
pp. 136-144 ◽  
Author(s):  
Jérémy Barbé ◽  
Ling Xie ◽  
Klaus Leifer ◽  
Pascal Faucherand ◽  
Christine Morin ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Silicon Nanocrystals ◽  
Film Properties ◽  
Amorphous Silicon Carbide ◽  
Carbide Alloy

RF-PECVD deposition and optical properties of hydrogenated amorphous silicon carbide thin films

2014 ◽  
Vol 40 (7) ◽  
pp. 9791-9797 ◽  
Author(s):  
Enlong Chen ◽  
Guoping Du ◽  
Yu Zhang ◽  
Xiaomei Qin ◽  
Hongmei Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous

Deposition temperature effects on optical and structural properties of amorphous silicon carbide films

2013 ◽  
Vol 10 (5/6/7) ◽  
pp. 587 ◽  
Author(s):  
Saloua Merazga ◽  
Amer Brighet ◽  
Aissa Keffous ◽  
Kamel Mirouh ◽  
Lakhder Guerbous ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Structural Properties ◽  
Temperature Effects ◽  
Deposition Temperature ◽  
Amorphous Silicon Carbide

Highly Conductive and Optically Transparent Polycrystalline Iridium Oxide Thin Films Grown by Reactive Pulsed Laser Deposition

1997 ◽  
Vol 472 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Optical Transmission ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structure Morphology ◽  
Quartz Substrates

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).

scholarly journals Investigations on phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique for photo detecting applications

RSC Advances ◽  
2014 ◽  
Vol 4 (97) ◽  
pp. 54388-54397 ◽  
Author(s):  
R. K. Tripathi ◽  
O. S. Panwar ◽  
A. K. Kesarwani ◽  
Ishpal Rawal ◽  
B. P. Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Vacuum Arc ◽  
Amorphous Silicon Carbide ◽  
Silicon Target ◽  
Filtered Cathodic Vacuum Arc ◽  
Hydrogenated Amorphous

This paper reports the growth and properties of phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique using P doped solid silicon target as a cathode in the presence of acetylene gas.

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