Time‐resolved measurement of single‐electron tunneling in a Si single‐electron transistor with satellite Si islands

1995 ◽  
Vol 67 (20) ◽  
pp. 2957-2959 ◽  
Author(s):  
A. Fujiwara ◽  
Y. Takahashi ◽  
K. Murase ◽  
M. Tabe
Keyword(s):  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Time Resolved ◽  
Single Electron Tunneling

Quantum Current Modelling of Single Electron Transistors with N Potential Barrier

2019 ◽  
Vol 11 (12) ◽  
pp. 1261-1265
Author(s):  
Seyed Norollah Hedayat ◽  
Seyedeh Sahar Hedayat
Keyword(s):  
Electron Tunneling ◽  
Structural Parameters ◽  
Single Electron ◽  
Tunneling Effect ◽  
Single Electron Transistor ◽  
Single Electron Transistors ◽  
Current Voltage ◽  
Single Electron Tunneling ◽  
Quantum Current ◽  
New Type

The single electron transistor is a new type of switching device that uses controlled electron tunneling to amplify current. In this paper, we focus on some basic device characteristics like, single electron tunneling effect on which this single electron transistor works. In this research, transmission coefficient model of a single electron transistor with quantum dot arrays constraints is checked. Then, the current of the transistor is modeled on quantum dots. Finally, current–voltage characteristic based on quantum transport and structural parameters are analyzed.

scholarly journals Analysis of Triple Quantum Dots Single Electron Transistor (TQD-SET) for Various Configuration

2020 ◽  
Vol 2 (2) ◽  
pp. 56
Author(s):  
Stephanus Hanurjaya ◽  
Miftahul Anwar ◽  
Meiyanto Eko Sulistyo ◽  
Irwan Iftadi ◽  
Subuh Pramono
Keyword(s):  
Quantum Dots ◽  
Coulomb Blockade ◽  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Single Electron Transistors ◽  
Single Electron Tunneling ◽  
Triple Quantum Dots ◽  
Working Principle ◽  
Electron Transistors

<p class="Abstract">Single electron transistor (SET) has high potential for the development of quantum computing technologies in order to provide low power consumption electronics. For that purpose, many studies have been conducted to develop SET using dopants as quantum dots (QD). The working principle of SET basically is a single electron tunneling one by one through tunnel junction based on the coulomb blockade effect. This research will simulate various configurations of triple quantum dots single electron transistors (TQD-SET) using SIMON 2.0 with an experimental approach of MOSFET with dopants QD. The configurations used are series, parallel, and triangle configuration. The mutual capacitance (Cm), tunnel junctions (TJ), and temperature values of TQD-SET configurations are varied. The I-V characteristics are observed and analyzed for typical source-drain voltage (Vsd). it is found that the TQD series requires larger Vsd than parallel or triangular TQDs. On the other hands, the current in parallel TQD tends to be stable even though Cm is changed, and the current in the TQD triangle is strongly influenced by the Cm. By comparing these three configurations, it is observed that the tunnelling rate is higher for parallel TQD due to higher probability current moves through three dots by applying Vds.</p>

Sensing of dynamic charge states using single-electron tunneling transistors

1998 ◽  
Vol 168 (2) ◽  
pp. 219
Author(s):  
V.A. Krupenin ◽  
S.V. Lotkhov ◽  
H. Scherer ◽  
A.B. Zorin ◽  
F.-J. Ahlers ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Tunneling ◽  
Dynamic Charge ◽  
Charge States

Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film

2001 ◽  
Vol 90 (7) ◽  
pp. 3551-3557 ◽  
Author(s):  
Ken Uchida ◽  
Junji Koga ◽  
Ryuji Ohba ◽  
Shin-ichi Takagi ◽  
Akira Toriumi
Keyword(s):  
Electron Tunneling ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Insulator Film ◽  
Single Electron Tunneling
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