An optical instrument for overall stress and local stress relaxation analysis in thin metal films

1997 ◽  
Vol 68 (1) ◽  
pp. 143-149 ◽  
Author(s):  
Carina Kylner ◽  
Lars Mattsson
Keyword(s):  
Stress Relaxation ◽  
Local Stress ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Optical Instrument ◽  
Relaxation Analysis

Electromigration in Thin Metal Films in the Presence of Two Stress-Relaxation Mechanisms

1996 ◽  
Vol 428 ◽  
Author(s):  
A. Katsman ◽  
L. Levin
Keyword(s):  
Stress Relaxation ◽  
Current Density ◽  
Threshold Stress ◽  
Metal Films ◽  
Thin Metal ◽  
Diffusional Creep ◽  
Thin Metal Films ◽  
Stress Evolution ◽  
Threshold Length ◽  
Kinetics Of

AbstractKinetics of mass transfer in thin metal films during electromigration was analyzed as a function of the generated internal stress. Stress evolution was considered for the case when two different stress relaxation mechanisms can operate simultaneously near the anode end of the strip: thresholdless diffusional creep through a fixed aperture, and diffusional creep with a threshold stress, σt, through the same aperture. Stress distribution and electromigration rate were found as explicit functions of the film length, the aperture size, and the current density. The apparent threshold length was analyzed. It was shown that an apparent threshold product can grow with the current density, in agreement with the experimental results.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

On the electrocatalytic symbiotic synergism between Pt, Ni and Al in plasma vapour deposited PtxNiyAlz thin metal films for water electrolysis

2021 ◽  
Vol 494 ◽  
pp. 229344
Author(s):  
Roelof J. Kriek ◽  
Liesel A. van Heerden ◽  
Anzel Falch ◽  
Malcolm I. Gillespie ◽  
Alaa Y. Faid ◽  
...  
Keyword(s):  
Water Electrolysis ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films
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