Time-resolved, two-dimensional electron-temperature distribution of laser-imploded core plasmas

1997 ◽  
Vol 68 (1) ◽  
pp. 820-823 ◽  
Author(s):  
M. Heya ◽  
M. Nakasuji ◽  
H. Shiraga ◽  
N. Miyanaga ◽  
H. Azechi ◽  
...  
Keyword(s):  
Temperature Distribution ◽  
Electron Temperature ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Time Resolved

Temperature Distribution in Two-Dimensional Electron Gases under a Strong Magnetic Field

2010 ◽  
Vol 40 (5) ◽  
pp. 529-532 ◽  
Author(s):  
Naomi Hirayama ◽  
Akira Endo ◽  
Kazuhiro Fujita ◽  
Yasuhiro Hasegawa ◽  
Naomichi Hatano ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Temperature Distribution ◽  
Strong Magnetic Field ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

Two-dimensional time resolved measurements of the electron temperature in MST

2006 ◽  
Vol 77 (10) ◽  
pp. 10F318 ◽  
Author(s):  
P. Franz ◽  
F. Bonomo ◽  
L. Marrelli ◽  
P. Martin ◽  
P. Piovesan ◽  
...  
Keyword(s):  
Electron Temperature ◽  
Two Dimensional ◽  
Time Resolved ◽  
Time Resolved Measurements

Influence of microwave photo-excitation on the transport properties of the high mobility GaAs/AlGaAs 2D electron system

MRS Advances ◽  
2019 ◽  
Vol 4 (61-62) ◽  
pp. 3347-3352
Author(s):  
T. R. Nanayakkara ◽  
R. L. Samaraweera ◽  
A. Kriisa ◽  
U. Kushan Wijewardena ◽  
S. Withanage ◽  
...  
Keyword(s):  
Electron Temperature ◽  
Microwave Power ◽  
High Mobility ◽  
Electron System ◽  
Zero Field ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Field Limit ◽  
Theoretical Predictions ◽  
Dimensional Electron System

ABSTRACTWe examined the influence of the microwave power on the diagonal resistance in the GaAs/AlGaAs two dimensional electron system (2DES), in order to extract the electron temperature and determine microwave induced heating as a function of the microwave power. The study shows that microwaves produce a small discernable increase in the electron temperature both at null magnetic field and at finite magnetic fields in the GaAs/AlGaAs 2DES. The heating effect at null field appears greater in comparison to the examined finite field interval, although the increase in the electron temperature in the zero-field limit appears smaller than theoretical predictions.

Hot-electron-temperature relaxation time in a two-dimensional electron gas: AlGaN/GaN at 80 K

2002 ◽  
Vol 92 (8) ◽  
pp. 4490-4497 ◽  
Author(s):  
A. Matulionis ◽  
R. Katilius ◽  
J. Liberis ◽  
L. Ardaravičius ◽  
L. F. Eastman ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Electron Temperature ◽  
Electron Gas ◽  
Two Dimensional ◽  
Hot Electron ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Temperature Relaxation ◽  
Dimensional Electron Gas

Recombination Related to Two-Dimensional Electron Gas of AlxGa1-xN/GaN Single Heterostructures Studied with Picosecond Time-Resolved Photoluminescence

2003 ◽  
Vol 798 ◽  
Author(s):  
Qing Yang ◽  
Rob Armitage ◽  
Eicke R. Weber ◽  
Ronald Birkhahn ◽  
David Gotthold ◽  
...  
Keyword(s):  
Electron Gas ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Time Resolved ◽  
Hall Effect Measurements ◽  
Dimensional Electron Gas ◽  
Time Resolved Photoluminescence

ABSTRACTNearbandgap radiative recombination in undoped AlxGa1-xN/GaN (x = 0.28 to 0.35) single heterostructures grown by metalorganic chemical vapor deposition is investigated using picosecond time-resolved photoluminescence at 11K.Room temperature Hall effect measurements show both high sheet carrier concentrations (∼1×1013 cm-2) and high mobilities (∼1000 cm2/Vs), suggesting the formation of a two-dimensional electron gas (2DEG) at the heterointerface. The luminescence transient of the 3.481 eV emissions, which is usually assigned to donor-bound exciton emission of GaN, consists of an initial fast component and a slow second component. Samples with higher aluminum concentrations show broad luminescence peaks in the spectral range of 3.41—3.45 eV with long decay lifetimes over 1 ns. In addition, the below bandgap emissions saturate at high excitation power and shift toward lower energies with increasing time delay. The observed emissions are explained by the recombination processes involving the 2DEG at the heterointerface.

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