Quantitative detection of low energy positive and negative ions with a channel electron multiplier

1996 ◽  
Vol 67 (8) ◽  
pp. 2760-2764 ◽  
Author(s):  
C. A. Keller ◽  
B. H. Cooper
Keyword(s):  
Negative Ions ◽  
Low Energy ◽  
Quantitative Detection ◽  
Channel Electron Multiplier ◽  
Electron Multiplier

Efficiency of the channel electron multiplier for low energy 205Pb ions

1995 ◽  
Vol 46 (6-7) ◽  
pp. 477-478 ◽  
Author(s):  
M. Krčmar ◽  
Z. Krečak ◽  
A. Ljubičič ◽  
B.A. Logan ◽  
D.B. Isabelle ◽  
...  
Keyword(s):  
Low Energy ◽  
Channel Electron Multiplier ◽  
Electron Multiplier

First H+ Charge-Exchange Images in the Stim.

1976 ◽  
Vol 34 ◽  
pp. 504-505
Author(s):  
Wm. H. Escovitz ◽  
T. R. Fox ◽  
R. Levi-Setti
Keyword(s):  
Charge Exchange ◽  
Neutral Component ◽  
Channel Electron Multiplier ◽  
Electron Multiplier ◽  
Neutral Particles ◽  
Charged Beam ◽  
Scanning Transmission ◽  
Contrast Mechanism ◽  
Ion Microscopy ◽  
Beam Component

Charge exchange, the neutralization of ions by electron capture as the ions traverse matter, is a well-known phenomenon of atomic physics which is relevant to ion microscopy. In conventional transmission ion microscopes, the neutral component of the beam after it emerges from the specimen cannot be focused. The scanning transmission ion microscope (STIM) enables the detection of this signal to make images. Experiments with a low-resolution 55 kV STIM indicate that the charge-exchange signal provides a new contrast mechanism to detect extremely small amounts of matter. In an early version of charge-exchange detection (fig. 1), a permanent magnet installed between the specimen and the detector (a channel electron multiplier) sweeps the charged beam component away from the detector and allows only the neutrals to reach it. When the magnet is removed, both charged and neutral particles reach the detector.

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Sign in / Sign up

Export Citation Format

Share Document