Role of the collecting resistive layer on the static characteristics of a 1D a‐Si:H thin film position sensitive detector

1996 ◽  
Vol 67 (8) ◽  
pp. 2702-2707 ◽  
Author(s):  
E. Fortunato ◽  
R. Martins
1998 ◽  
Vol 507 ◽  
Author(s):  
E. Fortunato ◽  
R. Martins

ABSTRACTThe aim of this work is to present an analytical model able to interpret the role of the thin collecting resistive layer on the static performances exhibited by 2D amorphous silicon hydrogenated pin thin film position sensitive detectors. In addition, experimental results concerning the device linearity and spatial resolution are presented and checked against the predicted values of the analytical model proposed.


1999 ◽  
Vol 337 (1-2) ◽  
pp. 222-225 ◽  
Author(s):  
E Fortunato ◽  
F Soares ◽  
P Teodoro ◽  
N Guimarães ◽  
M Mendes ◽  
...  

1993 ◽  
Vol 297 ◽  
Author(s):  
E. Fortunato ◽  
M. Vieira ◽  
L. Ferreira ◽  
C.N. Carvalho ◽  
G. Lavareda ◽  
...  

We have developed a rectangular dual-axis large area Position Sensitive Detector (PSD), with 5 cm × 5 cm detection area, based on PIN hydrogenated amorphous silicon (a-Si:H) technology, produced by Plasma Enhanced Chemical Vapor Deposition (PECVD). The metal contacts are located in the four edges of the detected area, two of them located on the back side of the ITO/PIN/A1 structure and the others two located in the front side. The key factors of the detectors resolution and linearity are the thickness uniformity of the different layers, the geometry and the contacts location. Besides that, edge effects on the sensor's corner disturb the linearity of the detector. In this paper we present results concerning the linearity of the detector as well as its optoelectronic characteristics and the role of the i-layer thickness on the final sensor performances.


1995 ◽  
Vol 377 ◽  
Author(s):  
E. Fortunato ◽  
F. Soares ◽  
G. Lavareda ◽  
R. Martins

ABSTRACTA Linear array Thin Film Position Sensitive Detector (LTFPSD) based on hydrogenated amorphous silicon (a-Si:H) is proposed for the first time, taking advantage of the optical properties presented by a-Si:H devices we have developed a LTFPSD with 128 integrated elements able to be used in 3D inspections/measurements. Each element consists on an one-dimensional TFPSD, based on a p.i.n diode produced in a conventional PECVD system, where the doped layers are coated with thin resistive layers to establish the required device equipotentials. By proper incorporation of the LTFPSD into an optical inspection camera it will be possible to acquire information about an object/surface, through the optical cross-section method1. The main advantages of this system, when compared with the conventional CCDs, are the low complexity of hardware and software used and that the information can be continuously processed (analogue detection).


2000 ◽  
Vol 266-269 ◽  
pp. 1213-1217 ◽  
Author(s):  
E. Fortunato ◽  
I. Ferreira ◽  
F. Giuliani ◽  
P. Wurmsdobler ◽  
R. Martins

1994 ◽  
Vol 65 (12) ◽  
pp. 3784-3786 ◽  
Author(s):  
Elvira Fortunato ◽  
Guilherme Lavareda ◽  
Manuela Vieira ◽  
Rodrigo Martins

2001 ◽  
Vol 3 (3) ◽  
pp. 174-177 ◽  
Author(s):  
R. Martins ◽  
P. Teodoro ◽  
F. Soares ◽  
I. Ferreira ◽  
N. Guimarães ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document