Current–voltage characteristics of the end loss ion flux from a tandem mirror collected on a gridded energy analyzer

1996 ◽  
Vol 67 (6) ◽  
pp. 2207-2214 ◽  
Author(s):  
T. Saito ◽  
Y. Kiwamoto ◽  
Y. Tatematsu ◽  
Y. Yoshimura ◽  
M. Sakakibara ◽  
...  
Keyword(s):  
Ion Flux ◽  
Energy Analyzer ◽  
Tandem Mirror ◽  
Current Voltage ◽  
Current Voltage Characteristics

Field Emission Energy Distribution and Current-Voltage Characteristics Using Single Tip Gated Diodes

1999 ◽  
Vol 558 ◽  
Author(s):  
John M Bernhard ◽  
Ambrosio A. Rouse ◽  
Edward D. Sosa ◽  
Bruce E. Gnade ◽  
David E. Golden ◽  
...  
Keyword(s):  
Energy Distribution ◽  
Data Acquisition ◽  
Work Function ◽  
Field Emission ◽  
Low Cost ◽  
Energy Analyzer ◽  
Flat Surfaces ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Camac Crate

ABSTRACTField emission current-voltage characteristics and simultaneous field emission electron energy distributions have been measured using single tip gate diodes. An energy distribution is generated at each step of a current-voltage characteristic using a compact low-cost simulated hemispherical energy analyzer. A PC programmed with graphics-based data acquisition software is used for data acquisition and control. The PC is connected to a CAMAC crate and a picoammeter through a GPIB interface. The picoammeter measures the current leaving the tip and the field emission electrons are energy analyzed, detected and processed in the CAMAC crate. The CAMAC crate also sends control voltages. to the gate anode and the energy analyzer. This apparatus was used to measure tip work functions and Fowler-Nordheim tip shape parameters for Mo and IrO2 field emission tips. Work function measurements from field emission tips are compared to photoelectric work function measurements from flat surfaces.

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

scholarly journals Current–voltage characteristics of an impulse magnetron discharge in target material vapor

2020 ◽  
Vol 1686 ◽  
pp. 012019
Author(s):  
Andrey V. Kaziev ◽  
Kseniia A. Leonova ◽  
Maksim M. Kharkov ◽  
Alexander V. Tumarkin ◽  
Dobrynya V. Kolodko ◽  
...  
Keyword(s):  
Target Material ◽  
Magnetron Discharge ◽  
Current Voltage ◽  
Current Voltage Characteristics
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