Design and performance of a high‐temperature, high‐speed scanning tunneling microscope

1995 ◽  
Vol 66 (9) ◽  
pp. 4557-4565 ◽  
Author(s):  
L. Kuipers ◽  
R. W. M. Loos ◽  
H. Neerings ◽  
J. ter Horst ◽  
G. J. Ruwiel ◽  
...  
Keyword(s):  
High Temperature ◽  
Scanning Tunneling Microscope ◽  
High Speed ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
And Performance

High temperature electrochemical scanning tunneling microscope instrument

2002 ◽  
Vol 73 (1) ◽  
pp. 102-107 ◽  
Author(s):  
Andrei Shkurankov ◽  
Frank Endres ◽  
Werner Freyland
Keyword(s):  
High Temperature ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Tunneling Microscope

Growth and Decay of Germanium Islands on Silicon Studied by High Temperature Stm

1999 ◽  
Vol 583 ◽  
Author(s):  
M. Kästner ◽  
B. Voigtländer
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Scanning Tunneling Microscope ◽  
Strain Energy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Tunneling Microscope

AbstractWe use a scanning tunneling microscope (STM) capable of imaging the growing layer at high temperature during molecular beam epitaxy (MBE) to study the epitaxial growth of Germanium on Silicon and the decay of Ge islands. The periodicity of the (2×N) reconstruction of two-dimensional Ge layers on Si(001) is measured as function of the Ge coverage. Strain energy drives the formation of the (2×N) reconstruction and Si/Ge intermixing. A comparison to total energy calculations predicting the periodicity of the (2×N) reconstruction is used to estimate the amount of Si-Ge intermixing near the surface. The evolution of the size and shape of individual “hut clusters” is measured and explained by kinetically self-limiting growth. The relaxation of kinetically a determined morphology towards equilibrium is followed for a Ge layer on Si(111). Strained two-dimensional as well as partially relaxed three-dimensional islands dissolve and are soaked up by larger three-dimensional islands which are dislocated and therefore fully relaxed.

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