Single‐crystal magnetic metal films on GaAs grown by electrodeposition

1995 ◽  
Vol 67 (9) ◽  
pp. 1316-1318 ◽  
Author(s):  
R. Hart ◽  
P. A. Midgley ◽  
A. Wilkinson ◽  
W. Schwarzacher
Keyword(s):  
Single Crystal ◽  
Metal Films ◽  
Magnetic Metal

MBE of Magnetic Metallic Structures

MRS Bulletin ◽  
1988 ◽  
Vol 13 (6) ◽  
pp. 28-31 ◽  
Author(s):  
G. A. Prinz
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
High Vacuum ◽  
Metal Films ◽  
Lattice Match ◽  
Molecular Beam Epitaxial ◽  
Technical Developments ◽  
Magnetic Metal ◽  
Crystal Films ◽  
Molecular Beam Epitaxial Growth

Epitaxial growth of magnetic metals actually pre-dates epitaxial growth of semiconductors. The earliest work (1936), which reported single-crystal Fe growth on NaCl, exploited the fact that single-crystal substrates of NaCl were easy to obtain, readily cleaved, and could be cleaned in a vacuum by heating. The good lattice match between the two systems and lack of interfacial disruption upon growth permitted excellent quality single-crystal films of Fe to be grown in relatively modest vacuum. Improved vacuum techniques broadened the range of materials which could be studied, with respect to both the films and substrates. The most recent ultrahigh vacuum (UHV) techniques developed for molecular beam epitaxial growth of semiconductors, including the large array of electron-based analytical tools, have also been exploited to grow and characterize magnetic metal films.Some requirements for these magnetic materials, such as the need for higher temperature effusion sources to generate useful fluxes of Fe, Co and Ni, and high vacuum in the presence of e-beam sources in order to avoid oxidation of the rare earths, served to stimulate new technical developments for the field in general. It is now possible to control growth to a fraction of a monolayer (ML) and even to know when one ML coverage is complete and another is beginning. The techniques have become so successful that a whole new subfield of magnetism has emerged — surface and interfacial magnetism — in which the work would be largely meaningless if one could not grow precisely characterized epitaxial magnetic metal films. Recent work has shown that it is now possible to grow single-crystal magnetic metal films on a wide variety of substrates, including insulators (oxides and salts), semiconductors, and metals.

A Comparison of Transient Annealing Methods for Silicide Formation

1984 ◽  
Vol 37 ◽  
Author(s):  
R. E. Harper ◽  
C. J. Sofield ◽  
I. H. Wilson ◽  
K. G. Stephens
Keyword(s):  
Electron Beam ◽  
Single Crystal ◽  
Light Element ◽  
Metal Films ◽  
Silicon Wafers ◽  
Silicide Formation ◽  
Elastic Recoil ◽  
Surface Textures ◽  
Good Crystalline Quality ◽  
Cobalt Silicides

AbstractNickel and cobalt silicides have been formed by raster-scanned electron beam and flash-lamp irradiation of thin metal films on single crystal (100) and (111) silicon wafers. RBS and channelling measurements indicate that the NiSi2 is epitaxial and of good crystalline quality (Xmin 4% on (111)); epitaxial CoSi2 was more difficult to form and of somewhat poorer quality. The elastic recoil technique has been used to determine bulk and interfacial light element contamination. These measurements have been correlated with resistivity and SEM studies of the surface textures.

Ferromagnetic Resonance Frequency of Single-Layer Magnetic Metal Films with Lattice Distortion

2010 ◽  
Vol 459 ◽  
pp. 15-18
Author(s):  
Nozomu Shigeno ◽  
Shin Negishi ◽  
Kazushi Hoshi ◽  
Takayuki Fukunaga ◽  
Shinichi Furusawa ◽  
...  
Keyword(s):  
Resonance Frequency ◽  
Ferromagnetic Resonance ◽  
Lattice Distortion ◽  
Single Layer ◽  
Magnetic Films ◽  
Metal Films ◽  
Magnetic Metal ◽  
Ferromagnetic Resonance Frequency

The ferromagnetic resonance frequency of single-layer magnetic films has been investigated in relation to lattice distortion. It is found that the ferromagnetic resonance frequency depends on a lattice distortion. This result raises the possibility of tuning the ferromagnetic resonance frequency by controlling the lattice distortion.

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