Intensive cluster ion beam production by laser radiation impact on the anode of a vacuum diode

1994 ◽  
Vol 65 (4) ◽  
pp. 1402-1404
Author(s):  
S. A. Kondrashev
Author(s):  
J. Bachand ◽  
A. Freytsis ◽  
E. Harrington ◽  
M. Gwinn ◽  
N. Hofmeester ◽  
...  

Author(s):  
N. Toyoda ◽  
l. Yamada ◽  
S. Akiyama ◽  
L.C. Kimerling ◽  
Y. Ishikawa ◽  
...  

2012 ◽  
Vol 51 ◽  
pp. 08HA02 ◽  
Author(s):  
Takanori Suda ◽  
Noriaki Toyoda ◽  
Ken-ichi Hara ◽  
Isao Yamada

2021 ◽  
pp. 101428
Author(s):  
E.A. Skryleva ◽  
B.R. Senatulin ◽  
D.A. Kiselev ◽  
T.S. Ilina ◽  
D.A. Podgorny ◽  
...  

2008 ◽  
Vol 79 (2) ◽  
pp. 02A309 ◽  
Author(s):  
G. Gaubert ◽  
C. Barué ◽  
C. Canet ◽  
J. C. Cornell ◽  
M. Dubois ◽  
...  

2000 ◽  
Vol 614 ◽  
Author(s):  
D.B. Fenner ◽  
J. Hautala ◽  
L.P. Allen ◽  
J.A. Greer ◽  
W.J. Skinner ◽  
...  

ABSTRACTThin-film magnetic sensor and memory devices in future generations may benefit from a processing tool for final-step etching and smoothing of surfaces to nearly an atomic scale. Gas-cluster ion-beam (GCIB) systems make possible improved surface sputtering and processing for many types of materials. We propose application of GCIB processing as a key smoothing step in thin-film magnetic-materials technology, especially spin-valve GMR. Results of argon GCIB etching and smoothing of surfaces of alumina, silicon, permalloy and tantalum films are reported. No accumulating roughness or damage is observed. The distinct scratches and tracks seen in atomic-force microscopy of CMP-processed surfaces, are removed almost entirely by subsequent GCIB processing. The technique primarily reduces high spatial-frequency roughness and renders the topographic surface elevations more nearly gaussian (randomly distributed).


1996 ◽  
Vol 03 (01) ◽  
pp. 1017-1021 ◽  
Author(s):  
J. MATSUO ◽  
M. AKIZUKI ◽  
J. NORTHBY ◽  
G.H. TAKAOKA ◽  
I. YAMADA

A high-current (~100 nA) cluster-ion-beam equipment with a new mass filter has been developed to study the energetic cluster-bombardment effects on solid surfaces. A dramatic reduction of Cu concentration on silicon surfaces has been achieved by 20-keV Ar cluster (N~3000) ion bombardment. The removal rate of Cu with cluster ions is two orders of magnitude higher than that with monomer ions. A significantly higher sputtering yield is expected for cluster-ion irradiation. An energetic cluster-ion beam is quite suitable for removal of metal.


Author(s):  
H. Chen ◽  
S.W. Liu ◽  
X.M. Wang ◽  
M.N. Iliev ◽  
C.L. Chen ◽  
...  

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