Extraction of interface state density profile from the maximums of the parallel conductance versus applied gate bias curves Gp(Va), using the conductance technique

1992 ◽  
Vol 63 (9) ◽  
pp. 4189-4191 ◽  
Author(s):  
C. Papadas ◽  
P. Morfouli ◽  
G. Ghibaudo ◽  
G. Pananakakis
Keyword(s):  
Density Profile ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Gate Bias ◽  
Conductance Technique ◽  
Parallel Conductance

Interface-State-Density Evaluation of p-type and n-type Ge/GeNx Structures by Conductance Technique

2013 ◽  
Vol 133 (7) ◽  
pp. 1279-1284
Author(s):  
Takuro Iwasaki ◽  
Toshiro Ono ◽  
Yohei Otani ◽  
Yukio Fukuda ◽  
Hiroshi Okamoto
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Technique ◽  
Density Evaluation ◽  
P Type

Interface State Density Evaluation of p-Type and n-Type Ge/GeNxStructures by Conductance Technique

2015 ◽  
Vol 98 (6) ◽  
pp. 8-15
Author(s):  
TAKURO IWASAKI ◽  
TOSHIRO ONO ◽  
YOHEI OTANI ◽  
YUKIO FUKUDA ◽  
HIROSHI OKAMOTO
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Technique ◽  
Density Evaluation ◽  
P Type

Influence of Ambient, Gate Metal and Oxide Thickness on Interface State Density and Time Constant in MOSiC Capacitor

2008 ◽  
Vol 600-603 ◽  
pp. 735-738 ◽  
Author(s):  
Shinji Nakagomi ◽  
Kenta Sato ◽  
Shun Suzuki ◽  
Yoshihiro Kokubun
Keyword(s):  
Oxide Layer ◽  
Time Constant ◽  
Oxide Thickness ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Oxide Semiconductor ◽  
Mos Capacitor ◽  
Conductance Technique ◽  
Ambient Gas

A metal-oxide-semiconductor (MOS) capacitor was fabricated using 4H-SiC epitaxial layer, and the interface state was evaluated in oxygen and hydrogen ambient under high-temperature conditions by the AC conductance technique. The relationships between interface state density (Dit), and corresponding time constant (tit) were obtained. Influences of oxide thickness and of gate metal (Pt or Al) were studied. Dit of Pt gate capacitor is influenced by ambient gas at higher temperature but Dit of Al gate capacitor is little affected by ambient gas. Dit of capacitor with thicker oxide layer tends to be lower than that of capacitor with thinner oxide layer. Interface states with larger time constant are decreased for hydrogen ambient comparing with oxygen ambient in the Pt gate capacitor.

Electrical Characterization of the Oxide-Silicon Carbide Interface by MOS Conductance Technique

1985 ◽  
Vol 54 ◽  
Author(s):  
M. I. Chaudhry ◽  
W. B. Berry
Keyword(s):  
Electrical Characterization ◽  
Surface States ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Data ◽  
Capacitance Voltage ◽  
Conductance Technique ◽  
Electronic Surface

ABSTRACTThe electrical properties of the SiO2/SiC interface were studied using the conductance vs voltage (G-V) data for the metal-oxide-SiC (MOS) structure. It was found that the dry oxide contained too mjch charge either at the oxide-SiC interface or within the oxide films to obtain useful data. On the other hand the wet oxide invariably resulted in better capacitance and conductance data. The capacitance-voltage data showed that the SiC surface exhibited accumulation, depletion or inversion when the appropriate gate bias was applied. The conductance-voltage data indicate electronic surface states at the oxide-SiC interface. From this conductance data the interface state density has been estimated.

Identification of Charging Effects in Plasma-Enhanced TEOS Deposition with Non-Contact Test Techniques

1998 ◽  
Author(s):  
Tomasz Brozek ◽  
James Heddleson
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Wafer Surface ◽  
Oxide Charge ◽  
Contact Test ◽  
Deposition Power ◽  
Oxide Deposition

Abstract Use of non-contact test techniques to characterize degradation of the Si-SiO2 system on the wafer surface exposed to a plasma environment have proven themselves to be sensitive and useful in investigation of plasma charging level and uniformity. The current paper describes application of the surface charge analyzer and surface photo-voltage tool to explore process-induced charging occurring during plasma enhanced chemical vapor deposition (PECVD) of TEOS oxide. The oxide charge, the interface state density, and dopant deactivation are studied on blanket oxidized wafers with respect to the effect of oxide deposition, power lift step, and subsequent annealing.

scholarly journals Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation

2014 ◽  
Vol 778-780 ◽  
pp. 631-634 ◽  
Author(s):  
Yoshiyuki Akahane ◽  
Takuo Kano ◽  
Kyosuke Kimura ◽  
Hiroki Komatsu ◽  
Yukimune Watanabe ◽  
...  
Keyword(s):  
Interface State ◽  
Nitride Layer ◽  
State Density ◽  
Interface State Density ◽  
Process Temperature ◽  
Pure Nitrogen ◽  
Interface Property ◽  
Plasma Nitridation

A nitride layer was formed on a SiC surface by plasma nitridation using pure nitrogen as the reaction gas at the temperature from 800°C to 1400°C. The surface was characterized by XPS. The XPS measurement showed that an oxinitride layer was formed on the SiC surface by the plasma nitridation. The high process temperature seemed to be effective to activate the niridation reaction. A SiO2film was deposited on the nitridation layer to form SiO2/nitride/SiC structure. The interface state density of the SiO2/nitride/SiC structure was lower than that of the SiO2/SiC structure. This suggested that the nitridation was effective to improve the interface property.

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