Doping of p‐type shallow junctions using electron beam evaporation of boron layers for compatibility with complementary‐metal‐oxide‐semiconductor technology

W. Zagozdzon‐Wosik; D. Pan; M. F. Davis; I. Rusakova; Z.‐H. Zhang; K. Rhodes

doi:10.1063/1.114150

Doping of p‐type shallow junctions using electron beam evaporation of boron layers for compatibility with complementary‐metal‐oxide‐semiconductor technology

Applied Physics Letters ◽

10.1063/1.114150 ◽

1995 ◽

Vol 66 (1) ◽

pp. 76-78 ◽

Cited By ~ 1

Author(s):

W. Zagozdzon‐Wosik ◽

D. Pan ◽

M. F. Davis ◽

I. Rusakova ◽

Z.‐H. Zhang ◽

...

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Electron Beam Evaporation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Shallow Junctions ◽

P Type

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Evaluation of Seebeck coefficients in n- and p-type silicon nanowires fabricated by complementary metal–oxide–semiconductor technology

Nanotechnology ◽

10.1088/0957-4484/23/40/405707 ◽

2012 ◽

Vol 23 (40) ◽

pp. 405707 ◽

Cited By ~ 12

Author(s):

Younghoon Hyun ◽

Youngsam Park ◽

Wonchul Choi ◽

Jaehyeon Kim ◽

Taehyoung Zyung ◽

...

Keyword(s):

Metal Oxide ◽

Silicon Nanowires ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Seebeck Coefficients ◽

Type Silicon ◽

P Type

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A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal–oxide–semiconductor technology

Journal of Applied Physics ◽

10.1063/1.4795170 ◽

2013 ◽

Vol 113 (10) ◽

pp. 103106 ◽

Cited By ~ 21

Author(s):

Kaikai Xu ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Quantum Efficiency ◽

Light Emitting Diode ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Light Emitting

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The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Chinese Physics B ◽

10.1088/1674-1056/20/12/129401 ◽

2011 ◽

Vol 20 (12) ◽

pp. 129401 ◽

Cited By ~ 2

Author(s):

Jun-Rui Qin ◽

Shu-Ming Chen ◽

Bi-Wei Liu ◽

Zheng Liu ◽

Bin Liang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Collection ◽

Single Event ◽

Semiconductor Technology ◽

Modulation Effect ◽

Single Event Transient ◽

Substrate Doping

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Metal-oxide-semiconductor instability produced by electron-beam evaporation of Aluminum gates

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1978.19172 ◽

1978 ◽

Vol 25 (7) ◽

pp. 795-799 ◽

Cited By ~ 1

Author(s):

Han-Sheng Lee

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Electron Beam Evaporation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Soft Error Hardened Memory Design for Nanoscale Complementary Metal Oxide Semiconductor Technology

IEEE Transactions on Reliability ◽

10.1109/tr.2015.2410275 ◽

2015 ◽

Vol 64 (2) ◽

pp. 596-602 ◽

Cited By ~ 12

Author(s):

Jing Guo ◽

Liyi Xiao ◽

Tianqi Wang ◽

Shanshan Liu ◽

Xu Wang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Soft Error ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Memory Design

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Design and demonstration of antenna-coupled Schottky diodes in a foundry complementary metal-oxide semiconductor technology for electronic detection of far-infrared radiation

Journal of Applied Physics ◽

10.1063/1.5083689 ◽

2019 ◽

Vol 125 (19) ◽

pp. 194501 ◽

Cited By ~ 3

Author(s):

Z. Ahmad ◽

A. Lisauskas ◽

H. G. Roskos ◽

K. K. O

Keyword(s):

Metal Oxide ◽

Infrared Radiation ◽

Schottky Diodes ◽

Complementary Metal Oxide Semiconductor ◽

Far Infrared ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Electronic Detection ◽

Far Infrared Radiation

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Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.6843 ◽

2000 ◽

Vol 39 (Part 1, No. 12B) ◽

pp. 6843-6848 ◽

Cited By ~ 3

Author(s):

Mitsuru Narihiro ◽

Hitoshi Wakabayashi ◽

Makoto Ueki ◽

Kohichi Arai ◽

Takashi Ogura ◽

...

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Lithography Process ◽

Beam System ◽

Mix And Match

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Empirical implantation damage model and its effect on reverse short channel effect for 0.35 μm complementary metal–oxide–semiconductor technology

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589934 ◽

1998 ◽

Vol 16 (1) ◽

pp. 430

Author(s):

Jongmin Kim

Keyword(s):

Metal Oxide ◽

Damage Model ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Short Channel ◽

Short Channel Effect ◽

Implantation Damage ◽

Channel Effect

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Bit Swapping Linear Feedback Shift Register for Low Power Application Using 130nm Complementary Metal Oxide Semiconductor Technology

International Journal of Engineering ◽

10.5829/idosi.ije.2017.30.08b.03 ◽

2017 ◽

Keyword(s):

Metal Oxide ◽

Low Power ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Shift Register ◽

Oxide Semiconductor ◽

Linear Feedback ◽

Semiconductor Technology ◽

Feedback Shift Register ◽

Power Application

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Retina for pattern matching in standard 0.6-μm complementary metal oxide semiconductor technology

Journal of Electronic Imaging ◽

10.1117/1.1762886 ◽

2004 ◽

Vol 13 (3) ◽

pp. 559 ◽

Cited By ~ 4

Author(s):

Olivier Aubreton

Keyword(s):

Metal Oxide ◽

Pattern Matching ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology

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