Enhanced hot‐carrier spontaneous and stimulated recombination in a photopumped vertical cavity AlxGa1−xAs–GaAs quantum well heterostructure with multiple top and bottom native oxide mirrors

1995 ◽  
Vol 66 (5) ◽  
pp. 589-591 ◽  
Author(s):  
T. A. Richard ◽  
S. A. Maranowski ◽  
N. Holonyak ◽  
E. I. Chen ◽  
M. J. Ries ◽  
...  
Keyword(s):  
Quantum Well ◽  
Native Oxide ◽  
Hot Carrier ◽  
Vertical Cavity

Edge‐emitting quantum well heterostructure laser diodes with auxiliary native‐oxide vertical cavity confinement

1995 ◽  
Vol 67 (21) ◽  
pp. 3168-3170 ◽  
Author(s):  
P. W. Evans ◽  
N. Holonyak ◽  
S. A. Maranowski ◽  
M. J. Ries ◽  
E. I. Chen
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Native Oxide ◽  
Heterostructure Laser ◽  
Vertical Cavity

Improved mode stability in low threshold single quantum well native‐oxide defined vertical‐cavity lasers

1994 ◽  
Vol 65 (21) ◽  
pp. 2642-2644 ◽  
Author(s):  
D. L. Huffaker ◽  
J. Shin ◽  
H. Deng ◽  
C. C. Lin ◽  
D. G. Deppe ◽  
...  
Keyword(s):  
Quantum Well ◽  
Native Oxide ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Vertical Cavity Lasers ◽  
Mode Stability ◽  
Low Threshold ◽  
Vertical Cavity ◽  
Cavity Lasers

Electrical characteristics and hot carrier effects in quantum well solar cells

2017 ◽  
Author(s):  
Dac-Trung Nguyen ◽  
Laurent Lombez ◽  
Francois Gibelli ◽  
Myriam Paire ◽  
Soline Boyer-Richard ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Electrical Characteristics ◽  
Hot Carrier ◽  
Hot Carrier Effects

Thermally activated current–voltage asymmetry in quantum-well inter-subband photodetectors

1996 ◽  
Vol 74 (S1) ◽  
pp. 9-15 ◽  
Author(s):  
P. V. Kolev ◽  
M. J. Deen ◽  
H. C. Liu ◽  
Jianmeng Li ◽  
M. Buchanan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Transport Phenomena ◽  
Infrared Region ◽  
Avalanche Photodetectors ◽  
Long Wavelength ◽  
Hot Carrier ◽  
Thermally Activated ◽  
Current Voltage ◽  
Long Wavelength Infrared

Continuing research interest in quantum-well inter-subband-based devices can be associated with its prospects for numerous optoelectronic applications in the long wavelength infrared region. This paper presents experimentally measured field dependence of the thermally activated effective-barrier lowering in quantum-well inter-subband photodetectors (QWIPs). This barrier lowering is considered to be the main cause of the commonly observed asymmetry in the current–voltage characteristics of QWIPs. The research results presented here are important for understanding the factors determining the dark-current mechanisms that are crucial for further improvement in the characteristics of these devices. The study of current-carrier transport phenomena in a quantum well is also of interest for developing quantum-well lasers and avalanche photodetectors based on intraband processes, and also transistors based on ballistic or hot carrier transport phenomena.

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