New lens for a low‐voltage scanning electron microscope

1988 ◽  
Vol 59 (9) ◽  
pp. 1985-1989 ◽  
Author(s):  
Zhifeng Shao
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Low Voltage ◽  
Voltage Scanning ◽  
Scanning Electron

Investigation of the Image Contrast in an Ultra-Low Voltage Scanning Electron Microscope Using an Auger Electron Spectrometer

2019 ◽  
Vol 26 (4) ◽  
pp. 758-767 ◽  
Author(s):  
Yusuke Sakuda ◽  
Shunsuke Asahina ◽  
Takanari Togashi ◽  
Osamu Terasaki ◽  
Masato Kurihara
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Auger Electron ◽  
Low Voltage ◽  
Image Contrast ◽  
Electron Spectrometer ◽  
Voltage Scanning ◽  
Scanning Electron

Abstract

Stroboscopic testing of LSIs with LVSEM

1984 ◽  
Vol 42 ◽  
pp. 464-467
Author(s):  
H. Todokoro ◽  
S. Yoneda ◽  
K. Yamaguchi
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Radiation Damage ◽  
Packing Density ◽  
Low Voltage ◽  
Low Energy ◽  
Electron Radiation ◽  
Optical Aberration ◽  
Voltage Scanning ◽  
Scanning Electron

Recently, the low-voltage scanning electron microscope (LVSEM) has become the center of wide interest. This is because the SEM has become an indispensable instrument in the field of semiconductor production, where packing density is increasing and device geometry is shrinking to a few microns or less. However, application of the SEM in the semiconductor industries presents two serious problems: (i) electron radiation damage to transistor functions and (ii) charge-up of electrons on insulators. Various reports concerning electron radiation damage have been published (1,2,3), and it has been found that electron energy must be less than 2 kV to minimize radiation damage. Such low energy also avoids the charge-up effect. However, it is quite difficult to get a fine probe at such low energy due to insufficient source brightness and electron optical aberration.

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