Large‐area lanthanum hexaboride electron emitter

1985 ◽  
Vol 56 (9) ◽  
pp. 1717-1722 ◽  
Author(s):  
D. M. Goebel ◽  
Y. Hirooka ◽  
T. A. Sketchley
Keyword(s):  
Lanthanum Hexaboride ◽  
Large Area ◽  
Electron Emitter

High-current lanthanum-hexaboride electron emitter for a quasi-stationary arc plasma generator

2015 ◽  
Vol 41 (11) ◽  
pp. 930-933 ◽  
Author(s):  
V. I. Davydenko ◽  
A. A. Ivanov ◽  
G. I. Shul’zhenko
Keyword(s):  
Plasma Generator ◽  
Lanthanum Hexaboride ◽  
Arc Plasma ◽  
High Current ◽  
Electron Emitter

Characteristics of lanthanum hexaboride thin film cathode deposited on large area substrate

2011 ◽  
Vol 23 (4) ◽  
pp. 1101-1104
Author(s):  
刘曾怡 Liu Zengyi ◽  
林祖伦 Lin Zulun ◽  
王小菊 Wang Xiaoju ◽  
曹贵川 Cao Guichuan ◽  
祁康成 Qi Kangcheng
Keyword(s):  
Thin Film ◽  
Lanthanum Hexaboride ◽  
Large Area

Lanthanum Hexaboride Electron Emitter

1972 ◽  
Vol 43 (5) ◽  
pp. 2185-2192 ◽  
Author(s):  
H. Ahmed ◽  
A. N. Broers
Keyword(s):  
Lanthanum Hexaboride ◽  
Electron Emitter

A new large area lanthanum hexaboride plasma source

2010 ◽  
Vol 81 (8) ◽  
pp. 083503 ◽  
Author(s):  
C. M. Cooper ◽  
W. Gekelman ◽  
P. Pribyl ◽  
Z. Lucky
Keyword(s):  
Plasma Source ◽  
Lanthanum Hexaboride ◽  
Large Area

Development of a Large Area, Durable Electron Emitter for High Average Power KRF Lasers

2007 ◽  
Author(s):  
M. Myers ◽  
J. Giuliani ◽  
J. Sethian ◽  
M. Wolford ◽  
M. Friedman ◽  
...  
Keyword(s):  
Average Power ◽  
High Average Power ◽  
Large Area ◽  
Electron Emitter

scholarly journals Fabrication and characterization of a focused ion beam milled lanthanum hexaboride based cold field electron emitter source

2018 ◽  
Vol 113 (9) ◽  
pp. 093101 ◽  
Author(s):  
Gopal Singh ◽  
Robert Bücker ◽  
Günther Kassier ◽  
Miriam Barthelmess ◽  
Fengshan Zheng ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Lanthanum Hexaboride ◽  
Electron Emitter ◽  
Field Electron ◽  
Fabrication And Characterization

Convergent Beam Electron Diffraction

1978 ◽  
Vol 36 (3) ◽  
pp. 304-315
Author(s):  
G. Lehmpfuhl
Keyword(s):  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Crystal Surface ◽  
Diffraction Spot ◽  
Crystal Thickness ◽  
Large Area ◽  
Electron Microscopic ◽  
Additional Information ◽  
Microscopic Investigations

Introduction In electron microscopic investigations of crystalline specimens the direct observation of the electron diffraction pattern gives additional information about the specimen. The quality of this information depends on the quality of the crystals or the crystal area contributing to the diffraction pattern. By selected area diffraction in a conventional electron microscope, specimen areas as small as 1 µ in diameter can be investigated. It is well known that crystal areas of that size which must be thin enough (in the order of 1000 Å) for electron microscopic investigations are normally somewhat distorted by bending, or they are not homogeneous. Furthermore, the crystal surface is not well defined over such a large area. These are facts which cause reduction of information in the diffraction pattern. The intensity of a diffraction spot, for example, depends on the crystal thickness. If the thickness is not uniform over the investigated area, one observes an averaged intensity, so that the intensity distribution in the diffraction pattern cannot be used for an analysis unless additional information is available.

TEM Study of a Tilt Boundary in Hot-Pressed Silicon

1981 ◽  
Vol 39 ◽  
pp. 160-161
Author(s):  
C. B. Carter ◽  
J. Rose ◽  
D. G. Ast
Keyword(s):  
Electron Diffraction ◽  
Imaging Technique ◽  
Interface Structure ◽  
Large Area ◽  
Weak Beam ◽  
Lattice Fringe ◽  
Electron Diffraction Technique ◽  
Tilt Boundaries ◽  
Beam Technique ◽  
Twist Boundaries

The hot-pressing technique which has been successfully used to manufacture twist boundaries in silicon has now been used to form tilt boundaries in this material. In the present study, weak-beam imaging, lattice-fringe imaging and electron diffraction techniques have been combined to identify different features of the interface structure. The weak-beam technique gives an overall picture of the geometry of the boundary and in particular allows steps in the plane of the boundary which are normal to the dislocation lines to be identified. It also allows pockets of amorphous SiO2 remaining in the interface to be recognized. The lattice-fringe imaging technique allows the boundary plane parallel to the dislocation to be identified. Finally the electron diffraction technique allows the periodic structure of the boundary to be evaluated over a large area - this is particularly valuable when the dislocations are closely spaced - and can also provide information on the structural width of the interface.

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