Dynamics of a band‐edge transition in GaN grown by molecular beam epitaxy

1995 ◽  
Vol 66 (25) ◽  
pp. 3474-3476 ◽  
Author(s):  
M. Smith ◽  
G. D. Chen ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Salvador ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Edge ◽  
Band Edge Transition

In Situ Band-Edge Monitoring of Cd1−yZnyTe Substrates for Molecular Beam Epitaxy of HgCdTe

2019 ◽  
Vol 48 (10) ◽  
pp. 6138-6144
Author(s):  
R. N. Jacobs ◽  
B. Pinkie ◽  
J. Arias ◽  
J. D. Benson ◽  
L. A. Almeida ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Edge

Band edge versus deep luminescence of InxGa1−xN layers grown by molecular beam epitaxy

1998 ◽  
Vol 72 (24) ◽  
pp. 3190-3192 ◽  
Author(s):  
N. Grandjean ◽  
J. Massies ◽  
M. Leroux ◽  
P. De Mierry
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Edge

Near-band-edge optical properties of molecular beam epitaxy grown ZnSe epilayers on GaAs by modulation spectroscopy

1998 ◽  
Vol 83 (3) ◽  
pp. 1664-1669 ◽  
Author(s):  
R. C. Tu ◽  
Y. K. Su ◽  
C. F. Li ◽  
Y. S. Huang ◽  
S. T. Chou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Edge ◽  
Near Band Edge ◽  
Modulation Spectroscopy

Photomodulation spectroscopy of thin Ge films formed by molecular beam epitaxy on Si (111)

1995 ◽  
Vol 417 ◽  
Author(s):  
K. L. Stoke ◽  
P. Deelman ◽  
H. S. Kang ◽  
L. J. Schowalter ◽  
P. D. Persans
Keyword(s):  
Molecular Beam Epitaxy ◽  
Layer Thickness ◽  
Transmission Spectrum ◽  
Molecular Beam ◽  
Band Edge ◽  
Modulation Spectrum ◽  
Direct Band

AbstractThe photomodulated transmission spectrum of a single Ge layer grown at 500°C on the Si(1 11) surface by molecular beam epitaxy is reported. The nominal Ge layer thickness was 50 nm. The modulation spectrum of thicker layers is dominated by a threelobed structure centered 70–80 meV above the bulk direct band edge. This structure is ascribed to excitation-induced broadening of the lowest direct exciton.

Strong Direct Band-Edge Photoluminescence from Si/Si1-xGex/Si Quantum Well Grown by Molecular Beam Epitaxy with Post Annealing

1993 ◽  
Author(s):  
Akio NISHIDA ◽  
Kiyokazu NAKAGAWA ◽  
Toshikazu SHIMADA ◽  
Susumu FUKATSU ◽  
Yasuhiro SHIRAKI
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Band Edge ◽  
Post Annealing ◽  
Direct Band

InGaAs/AWAsSb Heterostructures Lattice-Matched to InP GRown by Molecular Beam Epitaxy

1990 ◽  
Vol 198 ◽  
Author(s):  
Y. Nakata ◽  
Y. Sugiyama ◽  
T. Inata ◽  
O. Ueda ◽  
S. Sasa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Lattice Image ◽  
Cross Sectional ◽  
Peak Energy ◽  
20 Nm ◽  
First Time ◽  
Lattice Matched

ABSTRACTWe have successfully grown InGaAs/AIAsSb quantum-well (QW) structures lattice-matched to InP by molecular beam epitaxy for the first time. We studied the band-edge discontinuity and the interface abruptness of these heterostructures. A cross-sectional lattice image of InGaAs/AlAsSb QWs taken along the [100] axis showed atomically smooth heterointerfaces. The photoluminescence (PL) peak energy of the 20-nm-thick InGaAs well (0.758 eV) was lower than that of InGaAs bulk (0.799 eV), indicating that the InGaAs/AlAsSb system has a staggered lineup. The conduction band-edge discontinuity, ΔEc, was evaluated to be 1.74 ± 0.04 eV, which was derived from parameter fitting to the 4.2 K PL peak energy shifts of QWs as a function of InGaAs well width between 2.1 nm and 20 nm. The corresponding valence band-edge discontinuity, ΔEv, was 0.07 ± 0.02 eV. We also fabricated a resonant tunneling barrier structure of InGaAs (4.4 nm)/AlAsSb (2.9 nm), and obtained a very high peak-to-valley current ratio of 15 at 300 K.

Sign in / Sign up

Export Citation Format

Share Document