Near band-edge photoluminescence from Si1−xGex/Si superlattices grown by molecular-beam epitaxy

1992 ◽  
Vol 10 (2) ◽  
pp. 924 ◽  
Author(s):  
T. D. Steiner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Edge ◽  
Near Band Edge

Near-band-edge optical properties of molecular beam epitaxy grown ZnSe epilayers on GaAs by modulation spectroscopy

1998 ◽  
Vol 83 (3) ◽  
pp. 1664-1669 ◽  
Author(s):  
R. C. Tu ◽  
Y. K. Su ◽  
C. F. Li ◽  
Y. S. Huang ◽  
S. T. Chou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Edge ◽  
Near Band Edge ◽  
Modulation Spectroscopy

Temperature and Polarization Dependence of the Near-Band-Edge Photoluminescence in a Non-Polar ZnO Film Grownby Using Molecular Beam Epitaxy

2008 ◽  
Vol 53 (1) ◽  
pp. 288-291 ◽  
Author(s):  
Yoon Sung Nam ◽  
Sang Wook Lee ◽  
K. S. Baek ◽  
S. K. Chang ◽  
Ji-Wook Ryu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Polarization Dependence ◽  
Band Edge ◽  
Near Band Edge ◽  
Zno Film

In Situ Band-Edge Monitoring of Cd1−yZnyTe Substrates for Molecular Beam Epitaxy of HgCdTe

2019 ◽  
Vol 48 (10) ◽  
pp. 6138-6144
Author(s):  
R. N. Jacobs ◽  
B. Pinkie ◽  
J. Arias ◽  
J. D. Benson ◽  
L. A. Almeida ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Edge

Band edge versus deep luminescence of InxGa1−xN layers grown by molecular beam epitaxy

1998 ◽  
Vol 72 (24) ◽  
pp. 3190-3192 ◽  
Author(s):  
N. Grandjean ◽  
J. Massies ◽  
M. Leroux ◽  
P. De Mierry
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Edge

scholarly journals Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties

1999 ◽  
Vol 4 (S1) ◽  
pp. 333-338
Author(s):  
Nicolas Grandjean ◽  
Jean Massies ◽  
Mathieu Leroux ◽  
Marguerite Laügt ◽  
Philippe Vennéguès ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Structural Properties ◽  
Molecular Beam ◽  
Stokes Shift ◽  
Growth Conditions ◽  
Structural Quality ◽  
Luminescence Spectra ◽  
Near Band Edge ◽  
Flat Surfaces

The growth of InGaN layers was carried out by molecular beam epitaxy (MBE). The nitrogen precursor was ammonia. The optical and structural properties of the InGaN layers have been investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD) and photoluminescence (PL). For optimized growth conditions, the PL spectrum of InGaN (x=0.1) alloy is narrow (FWHM ≤ 50 meV) and the Stokes shift measured by PL excitation is weak (<50 meV), i.e. near band edge transitions are observed. Under these conditions, flat surfaces can be obtained, and InGaN/GaN quantum wells (QWs) with sharp interfaces can be grown. On the other hand, when growth conditions depart from a narrow optimum window, the structural quality of the samples strongly degrade, whereas the luminescence spectra are dominated by deep levels, exhibiting a strong Stokes shift. MBE grown light emitting diodes (LEDs) using InGaN/GaN QWs have been fabricated. Their electroluminescence (EL) peaks at 440 nm at 300K.

Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties

1998 ◽  
Vol 537 ◽  
Author(s):  
Nicolas Grandjean ◽  
Jean Massies ◽  
Mathieu Leroux ◽  
Marguerite Laügt ◽  
Philippe Vennéguès ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Structural Properties ◽  
Molecular Beam ◽  
Stokes Shift ◽  
Growth Conditions ◽  
Structural Quality ◽  
Luminescence Spectra ◽  
Near Band Edge ◽  
Flat Surfaces

AbstractThe growth of InGaN layers was carried out by molecular beam epitaxy (MBE). The nitrogen precursor was ammonia. The optical and structural properties of the InGaN layers have been investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD) and photoluminescence (PL). For optimized growth conditions, the PL spectrum of InGaN (x=0.1) alloy is narrow (FWHM ≤ 50 meV) and the Stokes shift measured by PL excitation is weak (<50 meV), i.e. near band edge transitions are observed. Under these conditions, flat surfaces can be obtained, and InGaN/GaN quantum wells (QWs) with sharp interfaces can be grown. On the other hand, when growth conditions depart from a narrow optimum window, the structural quality of the samples strongly degrade, whereas the luminescence spectra are dominated by deep levels, exhibiting a strong Stokes shift. MBE grown light emitting diodes (LEDs) using InGaN/GaN QWs have been fabricated. Their electroluminescence (EL) peaks at 440 nm at 300K.

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