Temperature dependent electrically detected magnetic resonance studies on silicon pn diodes

1995 ◽  
Vol 66 (12) ◽  
pp. 1521-1523 ◽  
Author(s):  
P. Christmann ◽  
W. Stadler ◽  
B. K. Meyer
Keyword(s):  
Magnetic Resonance ◽  
Temperature Dependent ◽  
Magnetic Resonance Studies ◽  
Electrically Detected Magnetic Resonance

Magnetic Resonance Studies of Recombination Processes in GaN-Based Light Emitting Diodes

1995 ◽  
Vol 395 ◽  
Author(s):  
W.E. Carlos ◽  
E.R. Glaser ◽  
T.A. Kennedy ◽  
S. Nakamura
Keyword(s):  
Magnetic Resonance ◽  
Light Emitting Diodes ◽  
Green Emission ◽  
Light Emitting ◽  
Magnetic Resonance Studies ◽  
Double Heterostructures ◽  
Recombination Processes ◽  
Electrically Detected Magnetic Resonance ◽  
Deep Donor ◽  
Broad Feature

ABSTRACTMagnetic resonance techniques are used to study the recombination processes in GaN-based light emitting diodes (LEDs). Electrically-detected magnetic resonance (EDMR) and electroluminescence-detected magnetic resonance (ELDMR) results on InGaN/AlGaN double heterostructures are presented for blue and green LEDs. In either technique our signals are dominated by a broad feature that we ascribe to a deep Zn-related acceptor. Our ELDMR measurements show that this is associated with the blue or green emission. Our EDMR measurements resolve a second center that is tentatively identified as a deep donor trap.

Nuclear magnetic resonance studies. III. Rotational isomerism of some C-glucosylflavonoid acetates

1965 ◽  
Vol 18 (5) ◽  
pp. 715 ◽  
Author(s):  
RA Eade ◽  
WE Hillis ◽  
DHS Horn ◽  
JJH Simes
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Steric Hindrance ◽  
Chemical Shifts ◽  
Rotational Isomerism ◽  
Bulky Substituent ◽  
Temperature Dependent ◽  
Magnetic Resonance Studies ◽  
Rotational Isomers ◽  
Nuclear Magnetic

The temperature-dependent variations in the spectra of certain C-glucosyl-flavonoid acetates are attributed to the effect of steric hindrance of bulky substituent groups of the sugar and aromatic moieties on the rate of interconversion of the two rotational isomers present. The differences in the chemical shifts of the protons of the two isomers are attributed to differences in the orientation and position of the acetyl and phenyl groups.

Electrically detected magnetic resonance studies of phosphorus doped diamond

2001 ◽  
Vol 308-310 ◽  
pp. 593-597 ◽  
Author(s):  
T. Graf ◽  
M.S. Brandt ◽  
C.E. Nebel ◽  
M. Stutzmann ◽  
S. Koizumi
Keyword(s):  
Magnetic Resonance ◽  
Magnetic Resonance Studies ◽  
Electrically Detected Magnetic Resonance ◽  
Phosphorus Doped

Temperature-dependent carbon-13 nuclear magnetic resonance studies of human serum low density lipoproteins

Biochemistry ◽  
1976 ◽  
Vol 15 (19) ◽  
pp. 4151-4157 ◽  
Author(s):  
Barry Sears ◽  
Richard J. Deckelbaum ◽  
Martin J. Janiak ◽  
G. Graham Shipley ◽  
Donald M. Small
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Human Serum ◽  
Low Density Lipoproteins ◽  
Low Density ◽  
Temperature Dependent ◽  
Magnetic Resonance Studies ◽  
Nuclear Magnetic

Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs

2008 ◽  
Vol 600-603 ◽  
pp. 719-722 ◽  
Author(s):  
Corey J. Cochrane ◽  
Patrick M. Lenahan ◽  
Aivars J. Lelis
Keyword(s):  
Nitric Oxide ◽  
Magnetic Resonance ◽  
Gate Voltage ◽  
Gate Bias ◽  
Magnetic Resonance Studies ◽  
Line Shapes ◽  
Response Versus ◽  
Electrically Detected Magnetic Resonance ◽  
The Relationship

We apply electrically detected magnetic resonance (EDMR) to variously processed 4H SiC MOSFETs from two vendors. Although, the EDMR line shapes observed are nearly the same for vendor 1 devices subjected to a nitric oxide (NO) anneal and devices without it, the relationship between EDMR and gate voltage differs greatly between these samples. Furthermore, the EDMR response versus gate bias varies dramatically. EDMR results from a third device produced by a second vendor are very different from those provided by the first vendor. This result implies that significantly different defect populations are present in devices fabricated by different vendors.

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