Room‐temperature deep‐blue stimulated emission in ZnS/ZnSe and ZnSTe/ZnSe strained layer superlattices

1995 ◽  
Vol 66 (23) ◽  
pp. 3140-3142 ◽  
Author(s):  
H. Wang ◽  
K. S. Wong ◽  
I. K. Sou ◽  
G. K. L. Wong
Keyword(s):  
Room Temperature ◽  
Stimulated Emission ◽  
Strained Layer ◽  
Deep Blue ◽  
Strained Layer Superlattices

Room‐temperature photoconductivity of InGaAs/GaAs strained‐layer superlattices

1991 ◽  
Vol 58 (17) ◽  
pp. 1878-1880 ◽  
Author(s):  
A. Salokatve ◽  
M. Hovinen ◽  
M. Pessa
Keyword(s):  
Room Temperature ◽  
Strained Layer ◽  
Strained Layer Superlattices

Defect studies in strained-layer quantum well heterostructures

1983 ◽  
Vol 41 ◽  
pp. 120-121
Author(s):  
J.M. Brown ◽  
M.E. Mochel ◽  
N. Holonyak ◽  
M.D. Camras ◽  
M.J. Ludowise ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Microscope Study ◽  
Electron Microscope Study ◽  
Stimulated Emission ◽  
High Excitation ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

The epitaxial growth of mismatched or strained III-V layers was shown to be viable as early as 1960. Osbourn et al suggested that strained layer GaP-GaAs1-xPx superlattices grown by organo-metal1ic vapor phase epitaxy (OMVPE) could be used to fold the Brillouin zone and make indirect-crystal direct. More recently, it has been shown that a strained-layer superlattice can be grown free enough of defects at heterointerfaces to make possible stimulated emission. This has been demonstrated on OMVPE GaAs1-xPx-GaAs (x=0.25) and GaAs-InxGa1-xAs (x=0.2) strained layer superlattices which have been operatedas photopuraped continuous (cw) 300K lasers but which at high excitation levels (> 103Acm-2) prove to be unstable. This paper presents the results of an electron microscope study of the defects produced in a GaAs-InxGa1-xAs strained superlattice as a result of high excitation levels of operation.

scholarly journals Ultraviolet stimulated emission and optical gain spectra in CdxZn1−xS‐ZnS strained‐layer superlattices

1992 ◽  
Vol 61 (18) ◽  
pp. 2190-2192 ◽  
Author(s):  
Yoichi Yamada ◽  
Yasuaki Masumoto ◽  
John T. Mullins ◽  
Tsunemasa Taguchi
Keyword(s):  
Optical Gain ◽  
Stimulated Emission ◽  
Strained Layer ◽  
Gain Spectra ◽  
Strained Layer Superlattices

Dispersive optical bistability in ZnCdSe-ZnSe/GaAs strained-layer superlattices on reflection at room temperature

1995 ◽  
Vol 263 (2) ◽  
pp. 203-205 ◽  
Author(s):  
Z.P. Guan ◽  
Z.H. Zheng ◽  
Y.M. Lu ◽  
B.J. Yang ◽  
X.W. Fan
Keyword(s):  
Optical Bistability ◽  
Room Temperature ◽  
Strained Layer ◽  
Strained Layer Superlattices

Room Temperature led's for the MID-Infrared Based on in(AS,SB) Strained Layer Superlattices

1996 ◽  
Vol 450 ◽  
Author(s):  
C. C. Phillips ◽  
P. J. P. Tang ◽  
M. J. Puliin ◽  
H. R. Hardaway ◽  
S. J. Chung ◽  
...  
Keyword(s):  
Room Temperature ◽  
Auger Recombination ◽  
Type Ii ◽  
Time Resolved ◽  
Mid Infrared ◽  
Strained Layer ◽  
Carrier Confinement ◽  
Strained Layer Superlattices

ABSTRACTArsenic-rich InAs/InAs1−x Sbx strained-layer superlattices (SLS's) are studied in time-resolved optical, and CW magneto-optical spectroscopies. A pronounced type-II offset, with electrons confined to the alloy layers, is found. High radiative efficiencies at wavelengths well into the mid-IR, and the suppression of Auger recombination yield LED's operating at 3–10 μm. Present room temperature powers are ∼30 μW, probably limited by inadequate carrier confinement.

Laser and photoluminescence spectra of InGaAs–GaAs strained-layer superlattices

1989 ◽  
Vol 67 (4) ◽  
pp. 394-399 ◽  
Author(s):  
N. E. J. Hunt ◽  
P. E. Jessop ◽  
B. K. Garside ◽  
R. L. S. Devine
Keyword(s):  
Low Power ◽  
Laser Emission ◽  
Optical Gain ◽  
Stimulated Emission ◽  
Nitrogen Laser ◽  
Strained Layer ◽  
Long Wavelength ◽  
Strained Layer Superlattices ◽  
Two Peaks ◽  
Hole Transition

Photoluminescence (PL) and laser emission from optically excited InxGa1−xAs–GaAs strained-layer superlattices (SLS) grown by molecular-beam epitaxy have been examined. In low-intensity PL, a single, narrow (≈5 nm FWHM) emission peak was observed, corresponding to the n = 1 electron to heavy-hole transition. This feature, as well as a series of higher energy transitions, was also observed in absorption and photoreflectance spectra. High-intensity PL, using a pulsed nitrogen laser for excitation, yielded an additional peak, several millielectronvolts lower in energy than the dominant low-power PL feature. Optical-gain measurements were performed using the variable stripe-length method. The stimulated emission emerging from the single cleaved end was shifted to the long-wavelength side of the low-power PL peak, and in the case of the narrower well samples, the emission consisted of two peaks separated by about 8 meV. Lasing at these gain positions was observed when ≈400 μm long chips were prepared and their lengths were pumped with a stripe of nitrogen laser light. The observed gain spectrum has been attributed to a combination of a free-carrier-induced bandgap shift and self-absorption by unpumped material deeper within the SLS waveguide.

Si-Ge STRAINED LAYER SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-321-C5-327 ◽  
Author(s):  
H. BRUGGER ◽  
G. ABSTREITER
Keyword(s):  
Strained Layer ◽  
Strained Layer Superlattices

scholarly journals Amplification by stimulated emission of nitrogen-vacancy centres in a diamond-loaded fibre cavity

Nanophotonics ◽  
2020 ◽  
Vol 9 (15) ◽  
pp. 4505-4518
Author(s):  
Sarath Raman Nair ◽  
Lachlan J. Rogers ◽  
Xavier Vidal ◽  
Reece P. Roberts ◽  
Hiroshi Abe ◽  
...  
Keyword(s):  
Room Temperature ◽  
Gain Medium ◽  
Stimulated Emission ◽  
Nitrogen Vacancy ◽  
Qualitative Model ◽  
Seed Laser ◽  
Laser Threshold ◽  
Cavity System ◽  
Emission Changes ◽  
532 Nm

AbstractLaser threshold magnetometry using the negatively charged nitrogen-vacancy (NV−) centre in diamond as a gain medium has been proposed as a technique to dramatically enhance the sensitivity of room-temperature magnetometry. We experimentally explore a diamond-loaded open tunable fibre-cavity system as a potential contender for the realisation of lasing with NV− centres. We observe amplification of the transmission of a cavity-resonant seed laser at 721 nm when the cavity is pumped at 532 nm and attribute this to stimulated emission. Changes in the intensity of spontaneously emitted photons accompany the amplification, and a qualitative model including stimulated emission and ionisation dynamics of the NV− centre captures the dynamics in the experiment very well. These results highlight important considerations in the realisation of an NV− laser in diamond.

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