Effects of additives on the preferred orientation of Mn–Zn ferrite thin films deposited by ion beam sputtering

1995 ◽  
Vol 66 (10) ◽  
pp. 1282-1284 ◽  
Author(s):  
Hae Seok Cho ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Preferred Orientation ◽  
Ion Beam Sputtering ◽  
Zn Ferrite ◽  
Beam Sputtering ◽  
Ferrite Thin Films

Effects of the Substrate Temperature on the Crystallization and Development of Texture of Mn-Zn Ferrite thin Films Deposited by Ion Beam Sputtering

1993 ◽  
Vol 317 ◽  
Author(s):  
Hae Seok Cho ◽  
Sang Ki Ha ◽  
Min Hong Kim ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Ion Beam ◽  
Preferred Orientation ◽  
Crystallographic Structure ◽  
Ion Beam Sputtering ◽  
Zn Ferrite ◽  
Beam Sputtering ◽  
Ferrite Thin Films ◽  
Deposited Films

ABSTRACTWe investigated the effects of the substrate temperature (Ts) on the crystallization and the development of texture of Mn-Zn ferrite thin films on SiO2/Si (100) under ion bombardment during ion beam sputtering. As-deposited films showed ferrimagnetic properties in spite of their crystallographic structure of wustite. The crystallographic structure of as-deposited films changed from (111) wustite structure to (222) spinel structure as oxygen partial pressure increased. The (222) preferred orientation seems to originate from oxygen-deficit ambient and preferential resputtering of oxygen ions in films during sputtering. The interplanar distance of the films deposited without oxygen flow decreased with increasing Ts due to release of compressive stress. The saturation Magnetization (Ms) of the film had maximum value at about 275°C, while the resistivity was almost of the same value irrespective of Ts. The unusual fact that crystallization and preferred orientation were less progressed at higher Ts was discussed.

(Mn,Zn,Fe)1−xO thin films showing ferrimagnetic property deposited by ion beam sputtering

1995 ◽  
Vol 10 (2) ◽  
pp. 274-279 ◽  
Author(s):  
Hae Seok Cho ◽  
Sang Ki Ha ◽  
Min Hong Kim ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Magnetic Moments ◽  
Spinel Ferrite ◽  
Oxygen Deficit ◽  
Crystallographic Structure ◽  
Ion Beam Sputtering ◽  
Zn Ferrite ◽  
Beam Sputtering ◽  
Deposited Films

We deposited (Mn,Zn,Fe)1−xO thin films of a wüstite structure on SiO2/Si(100) by ion beam sputtering using a single-crystal Mn-Zn ferrite target. The wüstite structure of the as-deposited film, confirmed by XRD, TEM, and XPS analysis, appeared to originate from an oxygen-deficit ambient and also from the preferential resputtering of the oxygen ions in films during deposition. The as-deposited films showed ferrimagnetic characteristics having quite a large Ms in spite of their crystallographic structure, wüstite. Such an unusual phenomenon is presumably due to the different magnetic moments of the constituent cations with disordered distribution. This wüstite phase could be transformed into the spinel ferrite phase with the same preferred orientation during postannealing under an appropriate oxygen partial pressure. The interplanar distance of the as-deposited films decreased with increasing Ts due to a release of compressive stress. The Ms of the film had a maximum value at about 275 °C, while the resistivity, mainly governed by the grain boundaries, was almost the same irrespective of Ts.

Preparation of thin films of (Tb,Dy)Fe2 giant magnetostrictive alloy by ion beam sputtering process.

1996 ◽  
Vol 8 (1/2) ◽  
pp. 27-28
Author(s):  
Mitsuhiro WADA ◽  
Yoshihito MATSUMURA ◽  
Hirohisa UCHIDA ◽  
Haru-Hisa UCHIDA ◽  
Hideo KANEKO
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

scholarly journals Fabrication of the Ln-Ba-Cu-O thin films by ion beam sputtering.

Shinku ◽  
1989 ◽  
Vol 32 (3) ◽  
pp. 259-262
Author(s):  
Tetsuro TAJIMA ◽  
Hajime KUWAHARA ◽  
Kohei OTANI ◽  
Tsutom YOTSUYA ◽  
Yoshihiko SUZUKI ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering
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