Real‐time thickness control of resonant‐tunneling diode growth based on reflection mass spectrometry

1995 ◽  
Vol 66 (19) ◽  
pp. 2555-2557 ◽  
Author(s):  
F. G. Celii ◽  
T. B. Harton ◽  
Y.‐C. Kao ◽  
T. S. Moise
Keyword(s):  
Mass Spectrometry ◽  
Real Time ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Thickness Control ◽  
Tunneling Diode

Closed-Loop Thickness Control of Resonant-Tunneling Diode Mbe Growth Using Spectroscopic Ellipsometry

1995 ◽  
Vol 406 ◽  
Author(s):  
F. G. Celii ◽  
Y.-C. Kao ◽  
T. S. Moise ◽  
M. Woolsey ◽  
T. B. Harton ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Resonant Tunneling ◽  
Closed Loop ◽  
Dead Reckoning ◽  
Resonant Tunneling Diode ◽  
Short Term ◽  
Thickness Control ◽  
Loop Control ◽  
Tunneling Diode

AbstractThe room temperature electrical characteristics of AlAs/InGaAs/InAs resonant-tunneling diode (RTD) devices are sensitive to sub-monolayer thickness changes, and present a challenging case for closed-loop control. We prepared stacked RTD structures by MBE in which the strained AlAs barrier thicknesses were controlled based on an in situ spectroscopic ellipsometry (SE) system. The short-term and long-term reproducibility of RTDs grown under SE-based control was compared with similar samples grown by “dead-reckoning” (timing-based shutter openings coupled with pre-growth flux calibrations). SE-based calibration can compensate for long-term flux drift, but closed-loop thickness control did not provide a significant improvement over deadreckoning in terms of short-term RTD reproducibility.

Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

2012 ◽  
Vol E95.C (5) ◽  
pp. 871-878
Author(s):  
Masanari FUJITA ◽  
Mitsufumi SAITO ◽  
Michihiko SUHARA
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Spin Polarized
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