Chemical downstream etching of silicon–nitride and polycrystalline silicon using CF4/O2/N2: Surface chemical effects of O2 and N2 additives

1995 ◽  
Vol 66 (20) ◽  
pp. 2634-2636 ◽  
Author(s):  
J. J. Beulens ◽  
B. E. E. Kastenmeier ◽  
P. J. Matsuo ◽  
G. S. Oehrlein
Keyword(s):  
Silicon Nitride ◽  
Polycrystalline Silicon ◽  
Surface Chemical ◽  
Chemical Effects

Comparison of Pulsed Laser and Furnace Annealing of Nitrogen Implanted Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
T. P. Smith ◽  
P. J. Stiles ◽  
W. M. Augustyniak ◽  
W. L. Brown ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Semiconductor Device ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Nitride Layer ◽  
High Dose ◽  
Infrared Transmission ◽  
Furnace Annealing

ABSTRACTFormation of buried insulating layers and redistribution of impurities during annealing are important processes in new semiconductor device technologies. We have studied pulsed ruby laser and furnace annealing of high dose (D>1017 N/cm2) 50 KeV nitrogen implanted silicon. Using He Back scattering and channeling, X-ray diffraction, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation and nitride formation. As has been previously reported, during furnace annealing at or above 1200C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4 ) layer. [1–4] In contrast, pulsed laser annealing produces a buried amorphous silicon nitride layer filled with voids or bubbles below a layer of polycrystalline silicon.

scholarly journals Surface Morphology of Single and Multi-Layer Silicon Nitride Dielectric Nano-Coatings on Silicon Dioxide and Polycrystalline Silicon

2019 ◽  
Vol 26 (1) ◽  
pp. 25-29
Author(s):  
Liga AVOTINA ◽  
Elina PAJUSTE ◽  
Marina ROMANOVA ◽  
Gennady ENICHEK ◽  
Aleksandrs ZASLAVSKIS ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Surface Morphology ◽  
Polycrystalline Silicon ◽  
Chemical Vapour ◽  
Attenuated Total Reflection ◽  
Infrared Spectrometry ◽  
Chemical Bonds ◽  
Force Microscopy ◽  
Atomic Force ◽  
Pressure Chemical

Silicon nitride (Si3N4) in a form of single and multi-layer nanofilms is proposed to be used as a dielectric layer in nanocapacitors for operation in harsh environmental conditions. Characterization of surface morphology, roughness and chemical bonds of the Si3N4 coatings has an important role in production process as the surface morphology affects the contact surface with other components of the produced device. Si3N4 was synthesized by using low pressure chemical vapour deposition method and depositing single and multi-layer (3 – 5 layers) nanofilms on SiO2 and polycrystalline silicon (PolySi). The total thickness of the synthesized nanofilms was 20 – 60 nm. Surface morphology was investigated by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM). Chemical bonds in the layers were identified by means of Fourier transform infrared spectrometry, attenuated total reflection (FTIR-ATR) method. (From the SEM and AFM images it was estimated that both single and multi-layer coatings are deposited homogenously. Si-N breathing and stretching modes are observed in FTIR spectra and the surface morphology is highly dependent on PolySi, therefore suggesting the decrease of the roughness of the bottom electrode for use in the nanocapacitors.

Surface Chemical Effects on the Optical Properties of Thin Nanocrystalline Diamond Films

1996 ◽  
Vol 423 ◽  
Author(s):  
A. V. Khomich ◽  
V. I. Polyakov ◽  
P. I. Perov ◽  
V. P. Varnin ◽  
I. G. Teremetskaya ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optical Transmission ◽  
Diamond Films ◽  
Nanocrystalline Diamond ◽  
Surface Chemical ◽  
Chemical Effects ◽  
Nanocrystalline Diamond Films ◽  
Hot Filament Cvd ◽  
Hot Filament ◽  
Highly Porous

AbstractThe effect of annealing in air on internal structure and optical properties of hot filament CVD nanocrystalline diamond films was investigated. Oxidation of the films lead to selective removal of intercrystallite layers with formation of highly porous structure with characteristic dimensions of several nanometers. Dramatic changes in optical transmission and Raman spectra were also observed. The origin of the two Raman spectrum maxima at 1140 and 500 cm−1 is discussed. Hydrogen absorption and desorption processes in porous diamond were studied.

Low temperature polycrystalline silicon thin film transistor with silicon nitride ion stopper

1996 ◽  
Vol 17 (6) ◽  
pp. 258-260 ◽  
Author(s):  
Kyung Ha Lee ◽  
Young Min Jhon ◽  
Hyuk Jin Cha ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film
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