Deposition of intrinsic, phosphorus‐doped, and boron‐doped hydrogenated amorphous silicon films at 50 °C

1994 ◽  
Vol 65 (13) ◽  
pp. 1674-1676 ◽  
Author(s):  
Pere Roca i Cabarrocas
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Boron Doped ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous

Hydrogen Diffusion in Boron-Doped Hydrogenated Amorphous Silicon Films: Crystallization and Induced Structural Changes

2005 ◽  
Vol 864 ◽  
Author(s):  
F. Kail ◽  
A. Hadjadj ◽  
P. Roca i Cabarrocas
Keyword(s):  
Amorphous Silicon ◽  
Structural Changes ◽  
Hydrogen Diffusion ◽  
Hydrogen Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hydrogen Atoms ◽  
Boron Doped ◽  
Hydrogenated Amorphous ◽  
Positively Charged

AbstractWe have studied the evolution of the structure of boron-doped hydrogenated amorphous silicon films exposed to a hydrogen plasma. From the early stages of exposure, hydrogen diffuses and forms a thick H-rich subsurface. At longer times, hydrogen plasma leads to the formation of a microcrystalline layer via chemical transport without crystallization of the initial layer. We observe that the hydrogen content increases in the films during a plasma exposure and once the microcrystalline layer is formed hydrogen diffuses out of the sample accompanied with a decrease in the boron content. This effect can be attributed to the electric field developed within the heterojunction a-Si:H/μc-Si:H that drives the positively charged hydrogen atoms in the boron-doped layer towards the μc-Si:H layer.

Microstructure Characterization of Hydrogenated Amorphous Silicon Films by Rare Gas Effusion Studies

2001 ◽  
Vol 664 ◽  
Author(s):  
Wolfhard Beyer
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Rare Gas ◽  
Rare Gases ◽  
Boron Doped ◽  
Rare Gas Atoms ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

ABSTRACTThe effusion of the rare gases neon and helium, as well as of hydrogen, was studied for plasma deposited (boron-doped and undoped) hydrogenated amorphous silicon films, grown at various substrate temperatures. Rare gas atoms were incorporated into the material during the growth process or by ion implantation. The results suggest that helium and neon effusion spectra give information on the material microstructure.

scholarly journals Phosphorus- and boron-doped hydrogenated amorphous silicon films prepared using vaporized liquid cyclopentasilane

2015 ◽  
Vol 589 ◽  
pp. 221-226 ◽  
Author(s):  
Takashi Masuda ◽  
Hideyuki Takagishi ◽  
Zhongrong Shen ◽  
Keisuke Ohdaira ◽  
Tatsuya Shimoda
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Boron Doped ◽  
Hydrogenated Amorphous

Effect of Annealing on Microstructure in (Doped and Undoped) Hydrogenated Amorphous Silicon Films

2014 ◽  
Vol 1666 ◽  
Author(s):  
W. Beyer ◽  
W. Hilgers ◽  
D. Lennartz ◽  
F.C. Maier ◽  
N.H. Nickel ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Content ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Boron Doped ◽  
Scan Time ◽  
Laser Treatments ◽  
Laser Impact ◽  
Definition Of ◽  
Hydrogenated Amorphous

ABSTRACTLaser heating and annealing of hydrogenated amorphous silicon (a-Si:H) films is of interest for improved material properties. Due to the variety of possible laser treatments with regard to wavelength, pulse duration, scan time etc., the definition of laser impact on the material is a challenge which we try to approach by comparing properties of laser and oven treated materials. Here we report on the effect of oven heat treatment (up to TA= 575°C) on microstructure and hydrogen content of hydrogenated amorphous silicon films, as detected by measurements of infrared absorption and of effusion of hydrogen as well as of implanted helium. The latter technique has been found to measure isolated voids (cavities) of the size of silicon divacancies and larger. Undoped as well as phosphorus and boron doped plasma-deposited a-Si:H films of various hydrogen content (< 15 at.%) were investigated, including undoped device grade a-Si:H. The results show little indication for void-related microstructure in the as-deposited and annealed state for material with a concentration of silicon bonded hydrogen below 5 at. %. At higher hydrogen concentration, evidence is found that hydrogen out-diffusion due to annealing causes isolated voids in concentrations up to about 1020 cm-3. A possible mechanism for the annealing induced (micro-)void generation is discussed.

Sign in / Sign up

Export Citation Format

Share Document