Effect of excess Zn around the active‐stripe mesa on the lasing threshold current of a [01̄1] oriented InGaAsP/InP buried‐heterostructure laser diode

1994 ◽  
Vol 65 (19) ◽  
pp. 2377-2379 ◽  
Author(s):  
S. N. G. Chu ◽  
R. A. Logan ◽  
D. L. Coblentz ◽  
A. M. Sergant
Keyword(s):  
Laser Diode ◽  
Threshold Current ◽  
Lasing Threshold ◽  
Heterostructure Laser ◽  
Buried Heterostructure ◽  
Active Stripe

InGaAsP planar buried heterostructure laser diode (PBH-LD) with very low threshold current

1982 ◽  
Vol 18 (1) ◽  
pp. 2 ◽  
Author(s):  
I. Mito ◽  
M. Kitamura ◽  
K. Kaede ◽  
Y. Odagiri ◽  
M. Seki ◽  
...  
Keyword(s):  
Laser Diode ◽  
Threshold Current ◽  
Heterostructure Laser ◽  
Buried Heterostructure ◽  
Low Threshold

Analysis of Reverse-Biased Electrostatic-Discharge-Induced Degradation of GaInAsP/InP Buried Heterostructure Laser Diode

2009 ◽  
Vol 48 (2) ◽  
pp. 022201 ◽  
Author(s):  
Hiroyuki Ichikawa ◽  
Akiko Kumagai ◽  
Kotaro Hamada ◽  
Akira Yamaguchi ◽  
Takashi Nakabayashi
Keyword(s):  
Laser Diode ◽  
Electrostatic Discharge ◽  
Heterostructure Laser ◽  
Buried Heterostructure

1.3 µm InGaAsP/InP Flat-Surface Buried Heterostructure Laser Diode Fabricated On P-Type Substrate

1989 ◽  
Author(s):  
I. Ushijima ◽  
S. Osaka ◽  
A. Fukushima ◽  
T. Ohizumi ◽  
S. Nakai ◽  
...  
Keyword(s):  
Laser Diode ◽  
Flat Surface ◽  
Heterostructure Laser ◽  
Buried Heterostructure ◽  
P Type
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