Yellow light (576 nm) lasing emission of GaInP/AlInP multiple quantum well lasers prepared by gas-source-molecular-beam-epitaxy

Y. Kaneko; A. Kikuchi; I. Nomura; K. Kishino

doi:10.1049/el:19900430

Yellow light (576 nm) lasing emission of GaInP/AlInP multiple quantum well lasers prepared by gas-source-molecular-beam-epitaxy

Electronics Letters ◽

10.1049/el:19900430 ◽

1990 ◽

Vol 26 (10) ◽

pp. 657-658 ◽

Cited By ~ 12

Author(s):

Y. Kaneko ◽

A. Kikuchi ◽

I. Nomura ◽

K. Kishino

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Yellow Light ◽

Gas Source

Download Full-text

Low‐threshold 1.3‐μm wavelength, InGaAsP strained‐layer multiple quantum well lasers grown by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.112192 ◽

1994 ◽

Vol 65 (7) ◽

pp. 892-894 ◽

Cited By ~ 7

Author(s):

Guang‐Jye Shiau ◽

Chih‐Ping Chao ◽

Paul E. Burrows ◽

Stephen R. Forrest

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Strained Layer ◽

Gas Source ◽

Low Threshold

Download Full-text

Yellow (5735 Å) emission GaInP multiple quantum well lasers grown by gas source molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588157 ◽

1995 ◽

Vol 13 (2) ◽

pp. 762 ◽

Cited By ~ 3

Author(s):

A. C. Chen

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Gas Source

Download Full-text

InGaAs/GaAs/InGaP multiple‐quantum‐well lasers prepared by gas‐source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.105858 ◽

1991 ◽

Vol 59 (22) ◽

pp. 2781-2783 ◽

Cited By ~ 28

Author(s):

J. M. Kuo ◽

Y. K. Chen ◽

M. C. Wu ◽

M. A. Chin

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Gas Source

Download Full-text

Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.98481 ◽

1987 ◽

Vol 51 (4) ◽

pp. 221-223 ◽

Cited By ~ 20

Author(s):

Tow C. Chong ◽

Clifton G. Fonstad

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Si Substrates ◽

Low Threshold

Download Full-text

Strain-compensations for interfacial strain and average strain in InGaAs/InAIP highly compressive-strained multiple quantum well structures on InP grown by gas source molecular beam epitaxy

Control of Semiconductor Interfaces ◽

10.1016/b978-0-444-81889-8.50016-x ◽

1994 ◽

pp. 69-73

Author(s):

K. Naniwae ◽

S. Sugou ◽

T. Anan

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Average Strain ◽

Quantum Well Structures ◽

Gas Source ◽

Interfacial Strain

Download Full-text

Molecular-beam epitaxy of phosphor-free 1.3 μm InAlGaAs multiple-quantum-well lasers on InP (100)

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2737434 ◽

2007 ◽

Vol 25 (3) ◽

pp. 1090 ◽

Cited By ~ 3

Author(s):

W. Li ◽

D. Moscicka ◽

A. Torfi ◽

W. I. Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum

Download Full-text

Type I/Type II Transition in InGaAlAs/InP Multiple Quantum Well Structures Grown by Gas Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l79 ◽

1994 ◽

Vol 33 (Part 2, No. 1B) ◽

pp. L79-L82 ◽

Cited By ~ 13

Author(s):

Yuichi Kawamura ◽

Hideki Kobayashi ◽

Hidetoshi Iwamura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Type I ◽

Type Ii ◽

Quantum Well Structures ◽

Gas Source

Download Full-text

High-performance long-wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:20070279 ◽

2007 ◽

Vol 43 (8) ◽

pp. 454 ◽

Cited By ~ 12

Author(s):

G. Adolfsson ◽

S.M. Wang ◽

M. Sadeghi ◽

A. Larsson

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

High Performance ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Long Wavelength

Download Full-text

High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90430-8 ◽

1994 ◽

Vol 136 (1-4) ◽

pp. 306-309 ◽

Cited By ~ 8

Author(s):

Chunhui Yan ◽

Dianzhao Sun ◽

Hongxi Guo ◽

Xiaobing Li ◽

Shirong Zu ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

High Quality ◽

Gas Source

Download Full-text

Effects of carbon impurity on GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings ◽

10.1109/commad.1996.610065 ◽

2002 ◽

Author(s):

D.H. Zhang ◽

C.Y. Li ◽

S.F. Yoon

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Carbon Impurity

Download Full-text