Light induced electron spin resonance in porous silicon

1994 ◽  
Vol 65 (10) ◽  
pp. 1245-1247 ◽  
Author(s):  
W. E. Carlos ◽  
S. M. Prokes
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Spin Resonance

Electron spin resonance of light holes in porous silicon

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4590-4592
Author(s):  
Yu.V. Gorelkinski ◽  
Kh.A. Abdullin ◽  
G.K. Kalykova ◽  
B.N. Mukashev ◽  
A.T. Olzhabay ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Spin Resonance

Electron spin resonance investigations of oxidized porous silicon

1993 ◽  
Vol 63 (14) ◽  
pp. 1930-1932 ◽  
Author(s):  
B. K. Meyer ◽  
V. Petrova‐Koch ◽  
T. Muschik ◽  
H. Linke ◽  
P. Omling ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Spin Resonance ◽  
Oxidized Porous Silicon

Electron spin resonance of light holes in porous silicon

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4590-4592
Author(s):  
Yu.V. Gorelkinski ◽  
Kh.A. Abdullin ◽  
G.K. Kalykova ◽  
B.N. Mukashev ◽  
A.T. Olzhabay ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Spin Resonance

Electron Spin Resonance Study of the Dangling Bond in a-Si:H and Porous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
T.J. Mc Mahon ◽  
Y. Xiao
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Electrochemical Etching ◽  
Bond Line ◽  
Electron Spin Resonance Study ◽  
Dangling Bond ◽  
Porous Si ◽  
Spin Resonance ◽  
G Value

We compare the electron spin resonance (ESR) signal of the dangling bond in porous silicon films, produced by electrochemical etching, to the ESR signal from hydrogenated amorphous Si (a-Si:H). The anisotropy of the ESR signal in porous Si showed g values varying as for the Pb Si/SiO2 interface dangling bond. The g value varies from g|| − 2.0020 to gL − 2.0080 with an inhomogeneously broadened line width increasing from 1.8 to 3.8 G. A porous Si ESR powder line, with superhyperfine and strain broadening intrinsic to porous Si, is compared to the a−Si:H dangling bond line. The result is more inhomogeneous broadening of line widths parallel and perpendicular to the dangling bond axis in a-Si:H, and less anisotropy in g|| − gL- No evidence was seen for light-induced metastability on a H-passivated porous Si film.

Electron Spin Resonance Centers and Light-Induced Effects in Porous Silicon

1993 ◽  
Vol 32 (Part 2, No. 3B) ◽  
pp. L365-L367 ◽  
Author(s):  
Haruo Yokomichi ◽  
Hideyuki Takakura ◽  
Michio Kondo
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Spin Resonance

Electron Spin Resonance Investigations of Rapid Thermal Oxidized Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
H. Linke ◽  
P. Omling ◽  
B. K. Meyer ◽  
V. Petrova-Koch ◽  
T. Muschik ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Nonradiative Recombination ◽  
Minimum Density ◽  
Spin Resonance ◽  
Different Types ◽  
Oxidized Porous Silicon ◽  
Pl Intensity ◽  
Defect Densities

ABSTRACTWe studied the defect properties present in rapid thermal oxidized porous silicon (RTOPS) by Electron Spin Resonance (ESR). Two different types of defects are distinguished, one similar to the ones observed in damaged c-Si, and in a-Si. The second one is probably related to the Pbo center at the Si/SiO2 interface. The minimum density of 1016 cm-3 is observed for the as etched and for the 900°C oxidized samples, but reaches a maximum of 8×1018 cm-3for the 600°C samples. The PL intensity anticorrelates with the defect densities, which shows that nonradiative recombination via defects is a very powerful channel in quenching the PL efficiency.

Nature of electron spin resonance centers in porous silicon

1993 ◽  
Vol 164-166 ◽  
pp. 957-960 ◽  
Author(s):  
H. Yokomichi ◽  
H. Takakura ◽  
M. Kondo ◽  
K. Morigaki
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Spin Resonance
Sign in / Sign up

Export Citation Format

Share Document