Photoluminescence, intersubband absorption, and double crystal x‐ray diffraction inp‐doped InGaAs/AlGaAs strained multiple quantum wells

1994 ◽  
Vol 65 (11) ◽  
pp. 1430-1432 ◽  
Author(s):  
V. W. L. Chin ◽  
T. L. Tansley ◽  
D. H. Zhang ◽  
K. Radhakrishnan ◽  
S. F. Yoon ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Intersubband Absorption

Phase Separation in InGaN/GaN Multiple Quantum Wells

1997 ◽  
Vol 482 ◽  
Author(s):  
M. D. Mccluskey ◽  
L. T. Romano ◽  
B. S. Krusor ◽  
D. P. Bour ◽  
C. Chua ◽  
...  
Keyword(s):  
Phase Separation ◽  
Active Region ◽  
Quantum Wells ◽  
Broad Peak ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Peaks

AbstractEvidence is presented for phase separation in In0.27Ga0.73N/GaN multiple quantum wells (MQW's). After annealing for 4 min at a temperature of 1100 °C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of Inrich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase.

Kinematic versus dynamic approaches of x‐ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells

1996 ◽  
Vol 79 (5) ◽  
pp. 2332-2336 ◽  
Author(s):  
E. Idiart‐Alhor ◽  
J. Y. Marzin ◽  
M. Quillec ◽  
G. Le Roux ◽  
G. Patriarche
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
X Ray

Strain-Compensation in InAsP/GaInP Multiple Quantum Wells for 1.3 μm Wavelength

1995 ◽  
Vol 379 ◽  
Author(s):  
X. B. Mei ◽  
C.W. Tu
Keyword(s):  
Quantum Wells ◽  
Lattice Mismatch ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Narrow Line Width ◽  
Gas Source ◽  
Wide Range ◽  
Strain Compensation

ABSTRACTWe show that high-quality strain-compensated InAsxP1−x/GayIn1−yP multiple quantum wells (MQWs) can be grown by gas-source molecular beam epitaxy on InP substrates even though the InAsxP1−x quantum wells have a large lattice mismatch (∼ 1.3%) with respect to InP. Very sharp satellite peaks in double-crystal X-ray diffraction and narrow line width in low-temperature photoluminescence (FWHM of 4 meV at 9 K) are obtained from MQWs of up to 50 periods. Strain compensation allows a wide range of the net strain around the ideally compensated point, where the net strain equals zero, without degrading crystalline quality.

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