(Ba+Sr)/Ti ratio dependence of the dielectric properties for (Ba0.5Sr0.5)TiO3 thin films prepared by ion beam sputtering

1994 ◽  
Vol 64 (13) ◽  
pp. 1644-1646 ◽  
Author(s):  
Shintaro Yamamichi ◽  
Hisato Yabuta ◽  
Toshiyuki Sakuma ◽  
Yoichi Miyasaka
1991 ◽  
Vol 243 ◽  
Author(s):  
Shintaro Yamamichi ◽  
Toshiyuki Sakuma ◽  
Takashi Hase ◽  
Yoichi Miyasaka

AbstractSrTiO3 and (Ba,Sr)TiO3 thin films have been prepared by ion beam sputtering on Pd coated sapphire substrates. Film compositions were almost the same as target compositions when powder targets were used. Capacitance-voltage characteristics depended on Sr/Ti ratio of the SrTiO3 films. Only small changes of capacitance value were observed in the range from -3V to 3V when the Sr/Ti ratio was 1.0. Compared with rf-magnetron sputtered film, ion beam sputtered SrTiO3 film indicated lower leakage current density in 50nm thickness. In (Bax,Sr1-x)TiO3 thin films, dielectric constant changed with Ba content (x) and showed a maximum at x=0.5. It also changed with the firing temperature of target powder. The highest value was obtained by using the target powder fired at 900°C. A 100nm thick (Ba0.5,Sr0.5)TiO3 thin film indicated a dielectric constant value of 320.


1996 ◽  
Vol 8 (1/2) ◽  
pp. 27-28
Author(s):  
Mitsuhiro WADA ◽  
Yoshihito MATSUMURA ◽  
Hirohisa UCHIDA ◽  
Haru-Hisa UCHIDA ◽  
Hideo KANEKO

Shinku ◽  
1989 ◽  
Vol 32 (3) ◽  
pp. 259-262
Author(s):  
Tetsuro TAJIMA ◽  
Hajime KUWAHARA ◽  
Kohei OTANI ◽  
Tsutom YOTSUYA ◽  
Yoshihiko SUZUKI ◽  
...  

1993 ◽  
Vol 223 (1) ◽  
pp. 11-13 ◽  
Author(s):  
Yijie Li ◽  
Guangcheng Xiong ◽  
Guijun Lian ◽  
Jie Li ◽  
Zizhao Gan

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