scholarly journals X‐ray photoelectron spectroscopy measurement of valence‐band offsets for Mg‐based semiconductor compounds

1994 ◽  
Vol 64 (25) ◽  
pp. 3455-3457 ◽  
Author(s):  
M. W. Wang ◽  
J. F. Swenberg ◽  
M. C. Phillips ◽  
E. T. Yu ◽  
J. O. McCaldin ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
X Ray ◽  
Spectroscopy Measurement ◽  
Semiconductor Compounds

X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset

2009 ◽  
Vol 94 (2) ◽  
pp. 022108 ◽  
Author(s):  
R. Deng ◽  
B. Yao ◽  
Y. F. Li ◽  
Y. M. Zhao ◽  
B. H. Li ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Spectroscopy Measurement

Determination of the valence band offsets at HfO2 /InN(0001) and InN/In0.3 Ga0.7 N(0001) heterojunctions using X-ray photoelectron spectroscopy

2010 ◽  
Vol 207 (6) ◽  
pp. 1335-1337 ◽  
Author(s):  
Anja Eisenhardt ◽  
Andreas Knübel ◽  
Ralf Schmidt ◽  
Marcel Himmerlich ◽  
Joachim Wagner ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
X Ray

Band offsets of HfO2/ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation

2009 ◽  
Vol 95 (16) ◽  
pp. 162104 ◽  
Author(s):  
Q. Chen ◽  
M. Yang ◽  
Y. P. Feng ◽  
J. W. Chai ◽  
Z. Zhang ◽  
...  
Keyword(s):  
Ab Initio ◽  
Photoelectron Spectroscopy ◽  
Ab Initio Calculation ◽  
Band Offsets ◽  
X Ray ◽  
Spectroscopy Measurement

Valence Band Offsets of LiPON∕LiCoO2 Hetero-Interfaces Determined by X-ray Photoelectron Spectroscopy

2011 ◽  
Vol 14 (12) ◽  
pp. A189 ◽  
Author(s):  
Jie Song ◽  
Susanne Jacke ◽  
Gennady Cherkashinin ◽  
Stefan Schmid ◽  
Quanfeng Dong ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
X Ray

Conduction and valence band offsets of ZnO/β-Ga2O3 interface measured by X-ray photoelectron spectroscopy

2018 ◽  
Author(s):  
S.M. Sun ◽  
W.J. Liu ◽  
Y.P. Wang ◽  
Y.W. Huan ◽  
H. Liu ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
X Ray

Compositionally Dependent Band Offsets In Aln/AlxGa1-xN Heterojunctions Measured By Using X-Ray Photoelectron Spectroscopy

1997 ◽  
Vol 482 ◽  
Author(s):  
R.A. Beach ◽  
E.C. Piquette ◽  
R.W. Grant ◽  
T.C. McGill
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Valence Band Maximum ◽  
Core Level ◽  
Band Offset ◽  
Valence Band Offset ◽  
Band Offsets ◽  
Band Maximum ◽  
X Ray ◽  
Al Content

AbstractAlthough GaN has been extensively studied for applications in both light emitting and high power devices, the AlN/GaN valence band offset remains an area of contention. Values quoted in the literature range from 0.8eV (Martin)[1] to 1.36eV (Waldrop)[2]. This paper details an investigation of the AIN/AlxGa1-xN band offset as a function of alloy composition. We find an AlN/AlxGa1-xN valence band offset that is nearly linear with Al content and an end point offset for AlN/GaN of 1.36 ± 0.1 eV. Samples were grown using radio frequency plasma assisted molecular beam epitaxy and characterized with x-ray photoelectron spectroscopy(XPS). Core-level and valence-band XPS data for AIN (0001) and AlxGa1-xN (0001) samples were analyzed to determine core-level to valence band maximum (VBM) energy differences. In addition, oxygen contamination effects were tracked in an effort to improve accuracy. Energy separations of core levels were obtained from AlN/AlxGa1-xN(0001) heterojunctions. From this and the core-level to valence band maximum separations of the bulk materials, valence band offsets were calculated.

Valence band offsets at oxide/InN interfaces determined by X-ray photoelectron spectroscopy

2012 ◽  
Vol 9 (3-4) ◽  
pp. 685-688 ◽  
Author(s):  
Anja Eisenhardt ◽  
Georg Eichapfel ◽  
Marcel Himmerlich ◽  
Andreas Knübel ◽  
Thorsten Passow ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
X Ray

Small valence band offsets of non-polar ZnO/Zn1−xMgxO heterojunctions measured by X-ray photoelectron spectroscopy

2014 ◽  
Vol 378 (30-31) ◽  
pp. 2312-2316 ◽  
Author(s):  
W. Chen ◽  
X.H. Pan ◽  
H.H. Zhang ◽  
Z.Z. Ye ◽  
P. Ding ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
X Ray

scholarly journals Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy

2007 ◽  
Vol 90 (13) ◽  
pp. 132105 ◽  
Author(s):  
P. D. C. King ◽  
T. D. Veal ◽  
P. H. Jefferson ◽  
C. F. McConville ◽  
T. Wang ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray
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