Room‐temperature stimulated emission of optically pumped GaAs/AlAs quantum wires grown on (311)A‐oriented substrates

1994 ◽  
Vol 64 (25) ◽  
pp. 3443-3445 ◽  
Author(s):  
A. Orth ◽  
J. P. Reithmaier ◽  
A. Forchel ◽  
R. Nötzel ◽  
K. Ploog
Keyword(s):  
Room Temperature ◽  
Quantum Wires ◽  
Stimulated Emission ◽  
Optically Pumped

Molecular Beam Epitaxy of Znl-x Cdx Se/ZnSe Heterostructures And Their Optical Properties

1991 ◽  
Vol 228 ◽  
Author(s):  
H. Luo ◽  
N. Samarth ◽  
J. K. Furdyna ◽  
H. Jeon ◽  
J. Ding ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stimulated Emission ◽  
Optically Pumped ◽  
Absorption Coefficients ◽  
Excitonic Absorption ◽  
Lasing Mechanism

ABSTRACTSuperlattices and quantum wells of Znl-xCdxSe/ZnSe, and heterostructures based on ZnSe/CdSe digital alloys have been grown by molecular beam epitaxy (MBE). Their optical properties were studied with particular emphasis on excitonic absorption and photopumped stimulated emission. Excitonic absorption is easily observable up to 400 K, and is characterized by extremely large absorption coefficients (α = 2×105cm−1). Optically pumped lasing action is obtained at room temperature with a typical threshold intensity of 100 kW/cm2. The lasing mechanism in these II-VI quantum wells appears to be quite different from that in the better studied III-V materials: in our case, the onset of stimulated emission occurs before the saturation of the excitonic absorption, and the stimulated emission occurs at an energy lower than that of the excitonic absorption.

Room‐temperature stimulated emission in optically pumped narrow ZnSe/ZnSxSe1−xmultiple‐quantum‐well structures

1992 ◽  
Vol 72 (10) ◽  
pp. 4969-4971 ◽  
Author(s):  
M. Dabbicco ◽  
R. Cingolani ◽  
M. Ferrara ◽  
I. Suemune ◽  
Y. Kuroda
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stimulated Emission ◽  
Optically Pumped ◽  
Quantum Well Structures

Fabrication of freestanding GaN by HVPE and optically pumped stimulated emission at room temperature

1999 ◽  
Vol 14 (3) ◽  
pp. 278-282 ◽  
Author(s):  
S T Kim ◽  
Y J Lee ◽  
D C Moon ◽  
C H Hong ◽  
T K Yoo
Keyword(s):  
Room Temperature ◽  
Stimulated Emission ◽  
Optically Pumped

Surface‐mode stimulated emission from optically pumped GaInN at room temperature

1995 ◽  
Vol 67 (2) ◽  
pp. 267-269 ◽  
Author(s):  
S. T. Kim ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Room Temperature ◽  
Stimulated Emission ◽  
Surface Mode ◽  
Optically Pumped

Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures

1999 ◽  
Vol 572 ◽  
Author(s):  
B. D. Little ◽  
S. Bidnyk ◽  
T. J. Schmidt ◽  
J. B. Lam ◽  
Y. H. Kwon ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Room Temperature ◽  
Laser Diodes ◽  
Stimulated Emission ◽  
Optically Pumped ◽  
Al Content ◽  
Order Of Magnitude ◽  
Deep Ultraviolet ◽  
Optical Waveguiding

ABSTRACTThe optical properties of (In, Al) GaN thin films and heterostructures have been compared under the conditions of strong nanosecond excitation. The stimulated emission (SE) threshold from AIGaN epilayers was found to increase with increasing Al content compared to GaN, in contrast to InGaN epilayers, where an order of magnitude decrease is observed. Optically pumped SE has been observed from AIGaN films with aluminum concentrations as high as 26%. Room temperature SE at wavelengths as low as 327 nm has been achieved. In contrast to the increase of SE threshold seen for AlGaN films, we found that AlGaN/GaN heterostructures which utilize carrier confinement and optical waveguiding drastically enhance the lasing characteristics. We demonstrate that AIGaN/GaN heterostructures are suitable for the development of deep ultraviolet laser diodes.

Room‐temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure

1994 ◽  
Vol 64 (11) ◽  
pp. 1377-1379 ◽  
Author(s):  
H. Amano ◽  
T. Tanaka ◽  
Y. Kunii ◽  
K. Kato ◽  
S. T. Kim ◽  
...  
Keyword(s):  
Room Temperature ◽  
Stimulated Emission ◽  
Optically Pumped ◽  
Double Heterostructure

scholarly journals Amplification by stimulated emission of nitrogen-vacancy centres in a diamond-loaded fibre cavity

Nanophotonics ◽  
2020 ◽  
Vol 9 (15) ◽  
pp. 4505-4518
Author(s):  
Sarath Raman Nair ◽  
Lachlan J. Rogers ◽  
Xavier Vidal ◽  
Reece P. Roberts ◽  
Hiroshi Abe ◽  
...  
Keyword(s):  
Room Temperature ◽  
Gain Medium ◽  
Stimulated Emission ◽  
Nitrogen Vacancy ◽  
Qualitative Model ◽  
Seed Laser ◽  
Laser Threshold ◽  
Cavity System ◽  
Emission Changes ◽  
532 Nm

AbstractLaser threshold magnetometry using the negatively charged nitrogen-vacancy (NV−) centre in diamond as a gain medium has been proposed as a technique to dramatically enhance the sensitivity of room-temperature magnetometry. We experimentally explore a diamond-loaded open tunable fibre-cavity system as a potential contender for the realisation of lasing with NV− centres. We observe amplification of the transmission of a cavity-resonant seed laser at 721 nm when the cavity is pumped at 532 nm and attribute this to stimulated emission. Changes in the intensity of spontaneously emitted photons accompany the amplification, and a qualitative model including stimulated emission and ionisation dynamics of the NV− centre captures the dynamics in the experiment very well. These results highlight important considerations in the realisation of an NV− laser in diamond.

scholarly journals Temperature-Dependent Stimulated Emission Cross-Section in Nd3+:YLF Crystal

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 431
Author(s):  
Giorgio Turri ◽  
Scott Webster ◽  
Michael Bass ◽  
Alessandra Toncelli
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Room Temperature ◽  
Radiative Decay ◽  
Emission Cross Section ◽  
Spectroscopic Properties ◽  
Stimulated Emission ◽  
Different Temperatures ◽  
Stimulated Emission Cross Section ◽  
Semi Empirical

Spectroscopic properties of neodymium-doped yttrium lithium fluoride were measured at different temperatures from 35 K to 350 K in specimens with 1 at% Nd3+ concentration. The absorption spectrum was measured at room temperature from 400 to 900 nm. The decay dynamics of the 4F3/2 multiplet was investigated by measuring the fluorescence lifetime as a function of the sample temperature, and the radiative decay time was derived by extrapolation to 0 K. The stimulated-emission cross-sections of the transitions from the 4F3/2 to the 4I9/2, 4I11/2, and 4I13/2 levels were obtained from the fluorescence spectrum measured at different temperatures, using the Aull–Jenssen technique. The results show consistency with most results previously published at room temperature, extending them over a broader range of temperatures. A semi-empirical formula for the magnitude of the stimulated-emission cross-section as a function of temperature in the 250 K to 350 K temperature range, is presented for the most intense transitions to the 4I11/2 and 4I13/2 levels.

Low threshold, room temperature pulsed and quasi-continuous lasing in optically pumped CdZnTe/ZnTe quantum wells

1993 ◽  
Vol 22 (5) ◽  
pp. 479-484 ◽  
Author(s):  
R. D. Feldman ◽  
T. D. Harris ◽  
J. E. Zucker ◽  
D. Lee ◽  
R. F. Austin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Optically Pumped ◽  
Low Threshold

Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown $a$-Plane GaN

2011 ◽  
Vol 4 (8) ◽  
pp. 082103 ◽  
Author(s):  
Mohamed Lachab ◽  
Krishnan Balakrishnan ◽  
Bin Zhang ◽  
Joe Dion ◽  
Qhalid Fareed ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optically Pumped
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