GaAs/AlAs trench‐buried quantum wires with nearly rectangular cross sections grown by metalorganic chemical vapor deposition onV‐grooved substrates

1994 ◽  
Vol 64 (4) ◽  
pp. 472-474 ◽  
Author(s):  
T. Sogawa ◽  
S. Ando ◽  
H. Kanbe
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Quantum Wires ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition

2007 ◽  
Vol 539-543 ◽  
pp. 1230-1235 ◽  
Author(s):  
Hyoun Woo Kim ◽  
S.H. Shim
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Metalorganic Chemical

We have synthesized the high-density Ga2O3 nanowires on gold (Au)-coated silicon substrates using metalorganic chemical vapor deposition. The nanowires exhibited one-dimensional structures having circular cross sections with diameters in the range of 30-200 nm. The energy dispersive x-ray spectroscopy revealed that the nanowires contained elements of Ga and O, without Au-related impurities. X-ray diffraction analysis and high-resolution transmission electron microscopy showed that the Ga2O3 nanowires were crystalline.

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections

Nano Letters ◽  
2003 ◽  
Vol 3 (8) ◽  
pp. 1063-1066 ◽  
Author(s):  
Tevye Kuykendall ◽  
Peter Pauzauskie ◽  
Sangkwon Lee ◽  
Yanfeng Zhang ◽  
Joshua Goldberger ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gan Nanowires ◽  
Metalorganic Chemical
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