Characterization of Si/Si1−xGex/Si quantum wells by cathodoluminescence imaging and spectroscopy

1994 ◽  
Vol 64 (5) ◽  
pp. 607-609 ◽  
Author(s):  
V. Higgs ◽  
E. C. Lightowlers ◽  
X. Xiao ◽  
J. C. Sturm
Keyword(s):  
Quantum Wells ◽  
Imaging And Spectroscopy ◽  
Cathodoluminescence Imaging

Characterization of SiGe quantum wire structures by cathodoluminescence imaging and spectroscopy

1995 ◽  
Vol 67 (12) ◽  
pp. 1709-1711 ◽  
Author(s):  
V. Higgs ◽  
E. C. Lightowlers ◽  
N. Usami ◽  
T. Mine ◽  
S. Fukatsu ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Imaging And Spectroscopy ◽  
Cathodoluminescence Imaging

Applying SEM-Cathodoluminescence imaging and spectroscopy as an advanced research tool for the characterization of archaeological material

2020 ◽  
Vol 158 ◽  
pp. 105230
Author(s):  
E. Palamara ◽  
P.P. Das ◽  
S. Nicolopoulos ◽  
L. Tormo Cifuentes ◽  
A. Oikonomou ◽  
...  
Keyword(s):  
Research Tool ◽  
Archaeological Material ◽  
Imaging And Spectroscopy ◽  
Cathodoluminescence Imaging

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

2011 ◽  
Vol 98 (18) ◽  
pp. 181904 ◽  
Author(s):  
Shigetaka Tomiya ◽  
Yuya Kanitani ◽  
Shinji Tanaka ◽  
Tadakatsu Ohkubo ◽  
Kazuhiro Hono
Keyword(s):  
Quantum Wells ◽  
Atomic Scale ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Scale Characterization

Optical characterization of type-II ZnO/ZnS multiple quantum wells grown by atomic layer deposition

2020 ◽  
Vol 694 ◽  
pp. 137740 ◽  
Author(s):  
Mostafa Afifi Hassan ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Sou Young Yu ◽  
June Key Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type Ii ◽  
Layer Deposition

scholarly journals Characterization of spin-orbit fields in InGaAs quantum wells

2016 ◽  
Vol 109 (15) ◽  
pp. 152104 ◽  
Author(s):  
T. Henn ◽  
L. Czornomaz ◽  
G. Salis
Keyword(s):  
Quantum Wells ◽  
Spin Orbit

Multipixel characterization of imaging CZT detectors for hard x-ray imaging and spectroscopy

2004 ◽  
Author(s):  
Santosh V. Vadawale ◽  
Jae Sub Hong ◽  
Jonathan E. Grindlay ◽  
Peter Williams ◽  
Minhua Zhang ◽  
...  
Keyword(s):  
X Ray ◽  
X Ray Imaging ◽  
Imaging And Spectroscopy ◽  
Czt Detectors
Sign in / Sign up

Export Citation Format

Share Document