Ambipolar diffusion anisotropy induced by defects innipi‐doped In0.2Ga0.8As/GaAs multiple quantum wells
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2000 ◽
Vol 36
(9)
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pp. 1013-1015
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2013 ◽
Vol 6
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pp. 710-716
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1994 ◽
Vol 23
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pp. 359-362
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1987 ◽
Vol 48
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pp. C5-511-C5-515
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1987 ◽
Vol 48
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pp. C5-239-C5-242
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