Reverse current mechanisms in amorphous silicon diodes

1994 ◽  
Vol 64 (9) ◽  
pp. 1129-1131 ◽  
Author(s):  
N. Kramer ◽  
C. van Berkel
Keyword(s):  
Amorphous Silicon ◽  
Reverse Current

Reverse current transient behavior in amorphous silicon Schottky diodes at low biases

1997 ◽  
Vol 70 (24) ◽  
pp. 3260-3262 ◽  
Author(s):  
R. I. Hornsey ◽  
K. Aflatooni ◽  
A. Nathan
Keyword(s):  
Amorphous Silicon ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Transient Behavior ◽  
Current Transient

Combinatorial Studies of Switching and Solid-Phase Crystallization in Amorphous Silicon

2005 ◽  
Vol 894 ◽  
Author(s):  
Paul Stradins ◽  
Howard M. Branz ◽  
Jian Hu ◽  
Scott Ward ◽  
Qi Wang
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Reverse Current ◽  
Solid Phase Epitaxy ◽  
Solid Phase Crystallization ◽  
Metallic Contacts ◽  
Image Monitoring ◽  
Kinetics Of

AbstractCombinatorial approaches are successfully applied for the optimization of electric write-once, thin-film Si antifuse memory devices, as well as for studying the solid-phase epitaxy kinetics of amorphous silicon on c-Si. High forward, low reverse current thin film Si diode deposition recipes are selected using cross-strips of different combinations of amorphous and microcrystalline doped layers, as well as a thickness-wedged intrinsic a-Si:H buffer layer. By studying switching in thickness-wedged a-Si:H layers, it is found that switching requires both a critical field and a critical bias voltage across the metallic contacts. Solid-phase epitaxy speed has a non-linear dependence on the film thickness, which is easily observed by optical image monitoring and analysis in wedged a-Si:H films on c-Si wafers.

Time Dependence of the Reverse Current in Amorphous Silicon Schottky Diodes

1997 ◽  
Vol 467 ◽  
Author(s):  
K. Aflatooni ◽  
R. Hornsey ◽  
A. Nathan
Keyword(s):  
Amorphous Silicon ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Hole Transport ◽  
Semiconductor Interface ◽  
Present Measurement ◽  
Measurement Results ◽  
Voltage Stress ◽  
Prolonged Stress

ABSTRACTWe present measurement results of the time-dependent reverse current in amorphous silicon Schottky diodes for a broad range of bias voltage stress conditions. The resultant behavior can be divided into three regimes, depending on the bias. At low biases, the reverse current exhibits a power-law dependence attributable to dispersive electron transport. In the medium bias regime, the current shows a dramatic increase which may be due to enhanced thermionic emission and tunneling of electrons across the barrier, enabled by hole transport to the metal-semiconductor interface. At high biases, the effects of prolonged stress were found to be irreversible. Here, an eventual decrease in reverse current was observed, with an associated loss of rectifying characteristics.

Machine learning reveals the complexity of dense amorphous silicon

Nature ◽  
2021 ◽  
Vol 589 (7840) ◽  
pp. 22-23
Author(s):  
Paul F. McMillan
Keyword(s):  
Machine Learning ◽  
Amorphous Silicon
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