scholarly journals Coherent‐electron intrinsic multistability in a double‐barrier tunneling diode

1993 ◽  
Vol 63 (16) ◽  
pp. 2268-2270 ◽  
Author(s):  
Mathias Wagner ◽  
Hiroshi Mizuta
Keyword(s):  
Double Barrier ◽  
Tunneling Diode ◽  
Barrier Tunneling

A light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well

2000 ◽  
Vol 6 (1-4) ◽  
pp. 331-334
Author(s):  
Y.W Suen ◽  
C.C Young ◽  
C.J Chang ◽  
J.C Wu ◽  
S.Y Wang ◽  
...  
Keyword(s):  
Double Barrier ◽  
Tunneling State ◽  
Tunneling Diode ◽  
Barrier Tunneling

scholarly journals Design of Solar Blind Photodetectors for Communication with Green Signal (λ= 0.532µm) in Space. Part II

2020 ◽  
pp. 20-25
Author(s):  
Samson Mil’ Shtein ◽  
Dhawal Asthana
Keyword(s):  
High Speed ◽  
Visible Region ◽  
Visible Light Communication ◽  
Electromagnetic Spectrum ◽  
Free Space Optical ◽  
Long Distance ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Solar Blind ◽  
Barrier Tunneling

The areas of Free Space Optical (FSO) communication and high-speed Visible Light Communication (VLC) offer potential for very high-speed data transmission. Favorable attributes including high frequency and wider bandwidths that can enable transmission speeds of the order 100Gb/s, associated with the visible region of the electromagnetic spectrum make it preferable for allowing communication among satellites and ground stations, under-water communication, etc. However, limitations associated with spectral absorption characteristics of the propagating media have stymied further development of such technologies. Aims: Commercial lasers operating in red, green and blue lights combined with three photodetectors, each sensitive to selected wavelengths (colors) present basics of long-distance optical communication system. The current study (Part II) depicts the design and operation of a solar-blind photodetector capable to work explicitly with green wavelength of 532nm. Study Design and Results: The structure of the solar-blind photodetector consists of two sections made of InxGa1-xN (Indium Gallium Nitride) heterostructure, (where x denotes the mole fraction)-a filter and a double barrier tunneling diode. The topmost approximately 1µm thick section acts as a filter and as a p-i-n solar cell providing the required voltage bias to the photodiode. The filter with Eg (Energy Band Gap)=2.33eV absorbs all photons having wavelengths shorter than 532nm. The double barrier tunneling photodiode which comprises the lower section operates with Eg=2.28eV. It consists of an n-type lightly doped quantum well having a width of 2.5nm housed between two lightly doped barriers of 10nm thickness. The 0.12µm topmost and bottom regions of the photodiode are doped with p and n (2×105cm-3) type impurities, respectively. The illuminated cross-section area of the device is finalized at 1mm2.

RESONANT TUNNELING IN DOUBLE BARRIER SEMICONDUCTOR NANO-STRUCTURES

1995 ◽  
Vol 09 (23) ◽  
pp. 3039-3051
Author(s):  
DILIP K. ROY ◽  
AJIT SINGH
Keyword(s):  
Quantum Measurement ◽  
Current Density ◽  
Resonant Tunneling ◽  
Tunneling Current ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Nano Structures ◽  
Current Densities ◽  
Double Barrier Resonant Tunneling ◽  
Measurement Approach

The principles of operation of a double barrier resonant tunneling diode (DBRTD) giving rise to negative differential conductivity effect are first reviewed. Next, the physics of resonant tunneling based on (i) the time-independent conventional approach and (ii) the time-dependent quantum measurement approach, as applied to a DBRTD, is discussed. Expressions for the resonant tunneling current densities through the barriers are then derived on the ideas of quantum measurement. Through the well the current, however, flows by the conventional mechanism. The three current density magnitudes are found to be identical under resonant conditions. Finally, an expression for the resonant tunneling current density due to a group of incident electrons is derived.

Influence on Characteristics of RTD Due to Variation of Different Parameters and Material Properties

2017 ◽  
Vol 26 (04) ◽  
pp. 1740022 ◽  
Author(s):  
Banasree Das ◽  
Manas Kumar Parai
Keyword(s):  
Simple Model ◽  
Electronic Transport ◽  
Material Properties ◽  
Resonant Tunneling ◽  
Barrier Structure ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Silvaco Atlas ◽  
Double Barrier Structure ◽  
Peak To Valley Ratio

In this paper, novel features offered by Resonant Tunneling Diode (RTD) are reviewed by simulating it under different conditions. GaAs/AlGaAs based RTD is used as the reference one to obtain the characteristics due to parametric variations. To fulfil this purpose a simple model of resonant electronic transport through a double-barrier structure is developed. I-V characteristics are studied by varying barrier parameters and well width. Different peak and valley currents are measured under these conditions. For the same set of parameters both symmetric and asymmetric cases are considered. Different materials of lower effective mass are also taken into consideration to improve Peak to Valley Ratio (PVR). The Indium (In) based materials are considered to compare the characteristics obtained from the conventional GaAs based RTD structure. All these proposed structures are simulated using Silvaco Atlas software.

Dominant photogenerated valley current in a double‐barrier resonant‐tunneling diode

1994 ◽  
Vol 65 (23) ◽  
pp. 2999-3001 ◽  
Author(s):  
H. S. Li ◽  
L. P. Chen ◽  
Y. W. Chen ◽  
K. L. Wang ◽  
D. S. Pan ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Double Barrier Resonant Tunneling
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