Overlayer strain: A key to directly tune the topography of high‐index semiconductor surfaces

1993 ◽  
Vol 63 (24) ◽  
pp. 3300-3302 ◽  
Author(s):  
Eric Tournié ◽  
Richard Nötzel ◽  
Klaus H. Ploog
1995 ◽  
Author(s):  
Richard NOTZEL ◽  
Jiro TEMMYO ◽  
Atsuo KOZEN ◽  
Toshiaki TAMAMURA ◽  
Takashi FUKUI ◽  
...  

1994 ◽  
Vol 49 (16) ◽  
pp. 11053-11059 ◽  
Author(s):  
Eric Tournié ◽  
Richard Nötzel ◽  
Klaus H. Ploog

Author(s):  
Richard Nötzel ◽  
Jiro Temmyo ◽  
Atsuo Kozen ◽  
Toshiaki Tamamura ◽  
Takashi Fukui ◽  
...  

Author(s):  
C. M. Sung ◽  
D. B. Williams

Researchers have tended to use high symmetry zone axes (e.g. <111> <114>) for High Order Laue Zone (HOLZ) line analysis since Jones et al reported the origin of HOLZ lines and described some of their applications. But it is not always easy to find HOLZ lines from a specific high symmetry zone axis during microscope operation, especially from second phases on a scale of tens of nanometers. Therefore it would be very convenient if we can use HOLZ lines from low symmetry zone axes and simulate these patterns in order to measure lattice parameter changes through HOLZ line shifts. HOLZ patterns of high index low symmetry zone axes are shown in Fig. 1, which were obtained from pure Al at -186°C using a double tilt cooling holder. Their corresponding simulated HOLZ line patterns are shown along with ten other low symmetry orientations in Fig. 2. The simulations were based upon kinematical diffraction conditions.


1989 ◽  
Vol 50 (C7) ◽  
pp. C7-119-C7-128
Author(s):  
M. SAUVAGE-SIMKIN

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