Generation of electrically conducting features in polyimide (KaptonTM) films with continuous wave, ultraviolet laser radiation

1993 ◽  
Vol 63 (24) ◽  
pp. 3382-3383 ◽  
Author(s):  
R. Srinivasan ◽  
R. R. Hall ◽  
D. C. Allbee
2013 ◽  
Vol 102 (21) ◽  
pp. 211903
Author(s):  
S. Bakhti ◽  
N. Destouches ◽  
L. Balan ◽  
E. Gamet ◽  
S. Reynaud

1986 ◽  
Vol 75 ◽  
Author(s):  
M. E. Gross ◽  
W. L. Brown ◽  
J. Linnros ◽  
L. R. Harriott ◽  
K. D. Cummings ◽  
...  

AbstractElectrically conducting palladium features have been produced by laser and ion beam irradiation of thin palladium acetate films. The photothermal reaction induced by scanned continuous wave Ar+ laser irradiation leads to metal lines that may exhibit periodic structure. This results from repeated propagation of “explosive” reaction fronts generated by coupling of the heat from the absorbed laser radiation with the heat of the decomposition reaction of the film. In contrast, 2 MeV He+ ion irradiation produces smooth metallic-looking features that contain up to 20% of the original carbon and 5% of the original oxygen content of the film. Films irradiated with 2 MeV Ne+ ions contain slightly lower amounts of carbon and oxygen residues, but fully exposed thick films (0.90 μm) appear black rather than metallic silver. In addition to having significantly higher purity, the laser-written features have lower resistivities than the ion beam-irradiated features. Infrared spectroscopy of the ion beam-irradiated films as a function of dose indicates a progressive loss in intensity of the characteristics acetate (COO-) vibrations. This occurs at doses lower than those associated with major C and O loss from the films. Partially ion-exposed films continue to decompose to metallic-looking material over a period of weeks after irradiation. Metallic palladium particles apparently catalyze this process.


1991 ◽  
Vol 236 ◽  
Author(s):  
Peter R. Herman ◽  
Boyi Chen ◽  
David J. Moore ◽  
Mark Canaga-Retnam

AbstractExcimer lasers sources of 193nm and 157 nm wavelength were used to obtain new photoablation etching rates for several materials of interest to the microelectronics industry. The harder 157nm radiation provided lower ablation rates and smaller threshold fluences for Polyimide and Polymethyl Methacrylate (PMMA) than with 193nm. For normally robust materials like quartz and Teflon (PTFE), the 157nm laser produced clean and smooth ablation sites with low threshold fluences of 620mJ/cm2 and 68mJ/cm2, respectively, features impossible to obtain with conventional excimer lasers at longer wavelengths. The data should help define new micromachining applications of these two materials for the electronic, optical or medical industry. Results are also reported for GaAs and InP based materials which are found to undergo moderate etch rates of 30-80nm/pulse at fluences of ∼3J/cm2, but suffer thermal damage and material segregation due to surface melting.


2014 ◽  
Vol 19 (03) ◽  
pp. 1 ◽  
Author(s):  
Rebecca L. Vincelette ◽  
Gary D. Noojin ◽  
Corey A. Harbert ◽  
Kurt J. Schuster ◽  
Aurora D. Shingledecker ◽  
...  

2018 ◽  
Vol 54 (4) ◽  
pp. 461-471 ◽  
Author(s):  
L. V. Bachurin ◽  
V. I. Kolesov ◽  
A. N. Konovalov ◽  
V. A. Ul’yanov ◽  
N. V. Yudin

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