Low‐temperature deposition of ferroelectric Bi4Ti3O12films by the reactive ionized cluster beam method

1993 ◽  
Vol 63 (8) ◽  
pp. 1050-1052 ◽  
Author(s):  
Norio Kaneko ◽  
Keisuke Yamamoto ◽  
Takeo Tsukamoto
2002 ◽  
Vol 17 (8) ◽  
pp. 1888-1891 ◽  
Author(s):  
Hyungsoo Choi ◽  
Sungho Park ◽  
Yi Yang ◽  
HoChul Kang ◽  
Kyekyoon (Kevin) Kim ◽  
...  

Low-temperature deposition of high-quality (Ba, Sr)TiO3 (BST) thin films was achieved in air on Pt/Ti/SiO2/Si substrates using the charged liquid cluster beam (CLCB) method. The Ba, Sr, and Ti precursors were synthesized using alkoxy carboxylate ligands to tailor their physical properties to the CLCB process. The as-deposited BST films fabricated at substrate temperatures as low as 280 °C exhibited high purity. The leakage current density and dielectric constant of the film, deposited at 300 °C and subsequently annealed at 700 °C, were 2.5 × 10−9 A/cm2 at 1.5 V and 305, respectively.


2001 ◽  
Vol 396 (1-2) ◽  
pp. 23-28 ◽  
Author(s):  
S.H Rhee ◽  
Y Yang ◽  
H.S Choi ◽  
J.M Myoung ◽  
K Kim

1998 ◽  
Vol 37 (Part 1, No. 4A) ◽  
pp. 1760-1763 ◽  
Author(s):  
Hiroyuki Sano ◽  
Hiroshi Hirasawa ◽  
Susumu Nakamura ◽  
Kenichi Kondo ◽  
Katsuaki Sato

2011 ◽  
Vol 26 (1) ◽  
pp. 12-16 ◽  
Author(s):  
Xiong-Fei ZHENG ◽  
Wen-Jie ZHAI ◽  
Ying-Chun LIANG ◽  
Tao SUN

2021 ◽  
Vol 204 ◽  
pp. 114152
Author(s):  
Jing Yan ◽  
Jun Ouyang ◽  
Hongbo Cheng ◽  
Peng Yan

1989 ◽  
Vol 54 (4) ◽  
pp. 383-385 ◽  
Author(s):  
K. Mizuno ◽  
M. Miyauchi ◽  
K. Setsune ◽  
K. Wasa

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