Size effects in the epitaxial realignment of polycrystalline silicon films onto Si substrates

1993 ◽  
Vol 62 (16) ◽  
pp. 1895-1897 ◽  
Author(s):  
F. Benyaïch ◽  
E. Rimini ◽  
C. Spinella ◽  
A. Cacciato ◽  
G. Fallico ◽  
...  
Keyword(s):  
Size Effects ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Si Substrates ◽  
Polycrystalline Silicon Films

Redistribution of Implanted Species in Polycrystalline Silicon Films on Silicon Substrate

2007 ◽  
Vol 264 ◽  
pp. 7-12 ◽  
Author(s):  
F. Salman ◽  
J. Arnold ◽  
Peng Zhang ◽  
Guan Gyu Chai ◽  
Fred A. Stevie ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Secondary Ion Mass Spectrometry ◽  
Silicon Film ◽  
Silicon Films ◽  
Si Substrates ◽  
Poly Silicon ◽  
Ar Gas ◽  
Polycrystalline Silicon Films ◽  
Secondary Ion ◽  
Diffusion Behaviors

Redistributions of implanted species after thermal annealing in polycrystalline silicon (poly-silicon) were studied by secondary ion mass spectrometry. Ten different elements were implanted into poly-silicon films grown on Si substrates. The implanted energies were chosen such that the expected ion range is within the poly-silicon film. Thermal anneals were carried out at temperatures between 300°C and 1000°C in flowing high purity Ar gas. Three different diffusion behaviors have been observed for these elements. For Be, Na, Ga, and Cr, most of the implanted ions diffused out to the surface of the poly-silicon film after anneal at 1000°C. For K, Ca, Ti, and Ge, the impurity ions diffused deeper into the bulk after anneal at 1000°C. For Cl and Mn ions, the concentration distributions became narrower when annealed at high temperatures.

Evaporated polycrystalline silicon films for photovoltaic applications - grain size effects

1978 ◽  
Vol 7 (2) ◽  
pp. 309-336 ◽  
Author(s):  
Charles Feldman ◽  
Norman A. Blum ◽  
Harry K. Charles ◽  
Frank G. Satkiewicz
Keyword(s):  
Grain Size ◽  
Size Effects ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Photovoltaic Applications ◽  
Polycrystalline Silicon Films ◽  
Grain Size Effects

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

Structure of Annealed Polycrystalline Silicon Films. I. Recrystallization

1986 ◽  
Vol 98 (2) ◽  
pp. 383-390 ◽  
Author(s):  
F. L. Edelman ◽  
J. Heydenreich ◽  
D. Hoehl ◽  
J. Matthäi ◽  
I. Melnik ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Stresses in thin polycrystalline silicon films

1988 ◽  
Vol 162 ◽  
pp. 365-374 ◽  
Author(s):  
V.M. Koleshko ◽  
V.F. Belitsky ◽  
I.V. Kiryushin
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Thin Polycrystalline ◽  
Polycrystalline Silicon Films
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