Time resolved photoluminescence of porous silicon: Evidence for tunneling limited recombination in a band of localized states

1993 ◽  
Vol 62 (19) ◽  
pp. 2381-2383 ◽  
Author(s):  
L. R. Tessler ◽  
F. Alvarez ◽  
O. Teschke
Keyword(s):  
Porous Silicon ◽  
Localized States ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Instrumentation for Reliably Determining Porous Silicon Photoluminescence Responses to Gaseous Analyte Vapors

2016 ◽  
Vol 70 (12) ◽  
pp. 1974-1980 ◽  
Author(s):  
Justin M. Reynard ◽  
Nathan S. Van Gorder ◽  
Caley A. Richardson ◽  
Richie D. Eriacho ◽  
Frank V. Bright
Keyword(s):  
Porous Silicon ◽  
Vapor Concentration ◽  
Photoluminescence Intensity ◽  
Spectral Measurements ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Hyper Spectral ◽  
New Instrumentation ◽  
Time Resolved Photoluminescence ◽  
New System

We report new instrumentation for rapidly and reliably measuring the temperature-dependent photoluminescence response from porous silicon as a function of analyte vapor concentration. The new system maintains the porous silicon under inert conditions and it allows on-the-fly steady-state and time-resolved photoluminescence intensity and hyper-spectral measurements between 293 K and 450 K. The new system yields reliable data at least 100-fold faster in comparison to previous instrument platforms.

Time-resolved photoluminescence spectroscopy of Er-implanted porous silicon

1997 ◽  
Vol 71 (1) ◽  
pp. 13-20 ◽  
Author(s):  
X. Wu ◽  
R. White ◽  
U. Hömmerich ◽  
F. Namavar ◽  
A.M. Cremins-Costa
Keyword(s):  
Porous Silicon ◽  
Photoluminescence Spectroscopy ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence in porous silicon

1997 ◽  
Vol 72-74 ◽  
pp. 347-349 ◽  
Author(s):  
J. Kudrna ◽  
P. Bartošek ◽  
F. Trojánek ◽  
I. Pelant ◽  
P. Malý
Keyword(s):  
Porous Silicon ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Distinctive features of time-resolved photoluminescence of porous silicon coated with a layer of diamondlike carbon

1998 ◽  
Vol 43 (4) ◽  
pp. 423-426 ◽  
Author(s):  
Yu. P. Piryatinskii ◽  
V. A. Semenovich ◽  
N. I. Klyui ◽  
A. G. Rozhin
Keyword(s):  
Porous Silicon ◽  
Time Resolved ◽  
Distinctive Features ◽  
Diamondlike Carbon ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence study of stabilised iron–porous silicon nanocomposites

2010 ◽  
Vol 506 (2) ◽  
pp. 496-499 ◽  
Author(s):  
M. Rahmani ◽  
H. Ajlani ◽  
A. Moadhen ◽  
M.-A. Zaïbi ◽  
L. Haji ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

scholarly journals Regions of Different Confinement in Low-Dimensional AlyInxGa1−x−yN Quantum Structures

2007 ◽  
Vol 2007 ◽  
pp. 1-6 ◽  
Author(s):  
A. Gröning ◽  
V. Pérez-Solórzano ◽  
M. Jetter ◽  
H. Schweizer
Keyword(s):  
Growth Parameters ◽  
Growth Conditions ◽  
Localized States ◽  
Time Resolved ◽  
Organic Vapor ◽  
Growth Interruption ◽  
Metal Organic ◽  
Low Dimensional ◽  
Time Resolved Photoluminescence ◽  
State Filling

The optical properties of metal-organic vapor phase epitaxy grown AlyInxGa1−x−yN quantum dot structures have been studied by time-resolved photoluminescence experiments. We investigated the recombination dynamics of the photo-exited carriers in dependence of the growth parameters such as aluminium flow and the duration of the growth interruption after the dot deposition. Our results confirm the presence of localized states, where the degree of localization is strongly dependent on the growth conditions. To describe this behavior, we propose a band structure with coupled potentials for these nanostructures. Finally, we demonstrate state filling to prove the zero-dimensional character of the strongly localized states in our quaternary quantum dots.

Temperature and Time-Resolved Dependence of Photoluminescence in InGaN Quantum Dots

2013 ◽  
Vol 750-752 ◽  
pp. 927-930
Author(s):  
Cheng Chen ◽  
Zhi Ren Qiu ◽  
Xiang Ping Shu ◽  
Zeng Cheng Li ◽  
Jian Ping Liu ◽  
...  
Keyword(s):  
Decay Time ◽  
Peak Position ◽  
Localized States ◽  
Fast Decay ◽  
Time Resolved ◽  
Experimental Systems ◽  
Slow Decay ◽  
Double Exponential ◽  
Increasing Temperature ◽  
Time Resolved Photoluminescence

Temperature dependence of photoluminescence (PL) and time resolved photoluminescence (TRPL) were obtained by two experimental systems. The relative intensity and peak position of PL show S-shift variation with increasing temperature, which may result from temperature induce carriers redistribution. Fast decay time and slow decay time were fitted by double exponential function from decay curves of TRPL at different emission energy, and the decreasing trend of both fast decay and slow decay time with increasing photon energy is attributed to various channels of recombination in shallow and deep localized states.

White Light Luminescence from Nano-ZnS Doped Porous Silicon

2001 ◽  
Vol 686 ◽  
Author(s):  
K. W. Cheah ◽  
Ling Xu ◽  
Xinfan Huang
Keyword(s):  
Porous Silicon ◽  
White Light ◽  
Radiative Recombination ◽  
Surface States ◽  
Silicon Layer ◽  
Visible Spectrum ◽  
Porous Silicon Layer ◽  
Time Resolved ◽  
Direct Excitation ◽  
Time Resolved Photoluminescence

Nano-ZnS was deposited into porous silicon. By varying the concentration of Zn2+ ion solution during nano-ZnS formation, the amount of nano-ZnS in porous silicon host can be controlled. The doped porous silicon exhibited a gradual shift in its photoluminescence peak from red to blue as a function of the nano-ZnS coverage. At an optimum doping, white light photoluminescence was obtained. A study in the luminescence lifetime showed that the radiative recombination at the blue end of the visible spectrum was due to nano-ZnS, whereas, luminescence emission at the red end of the visible spectrum came from porous silicon. The latter luminescence was due to in part tunneling of excited electrons from nanoZnS into porous silicon and in part direct excitation of porous silicon layer. Time-resolved photoluminescence also showed that radiative recombination was effectively dominated by the nano-ZnS. Photoluminescence excitation result revealed the presence of two excitation levels; one belonged to nano-ZnS at near uv region, and another at about 520 nm from the surface states of porous silicon and nano-ZnS. The doping of nano-ZnS into porous silicon demonstrates that luminescence color tuning is possible when an appropriate functional material is introduced into porous silicon.

Time-resolved photoluminescence of porous silicon under double-pulse excitation

1996 ◽  
Vol 198-200 ◽  
pp. 965-968 ◽  
Author(s):  
Shuji Komuro ◽  
Takitaro Morikawa ◽  
Patrick O'Keeffe ◽  
Yoshinobu Aoyagi
Keyword(s):  
Porous Silicon ◽  
Double Pulse ◽  
Pulse Excitation ◽  
Time Resolved ◽  
Time Resolved Photoluminescence
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