Measurement of nonradiative Auger and radiative recombination rates in strained‐layer quantum‐well systems

1993 ◽  
Vol 62 (2) ◽  
pp. 166-168 ◽  
Author(s):  
M. C. Wang ◽  
K. Kash ◽  
C. E. Zah ◽  
R. Bhat ◽  
S. L. Chuang
Keyword(s):  
Quantum Well ◽  
Radiative Recombination ◽  
Recombination Rates ◽  
Strained Layer

Interfacial Quality of Strained-Layer InGaAs/GaAs Quantum Well Lasers Grown by Gas-Source Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
G. Zhang ◽  
A. Ovtchinnikov ◽  
M. Pessa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Strong Dependence ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Gas Source ◽  
Recombination Centers

ABSTRACTWe report a study of interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy. It was found that the growth temperature (Tgr) of the InGaAs layer plays an important role in the interfacial quality. For Tgr < 515 °C, a large amount of non-radiative recombination centers is likely to exist in the InGaAs/GaAs quantum well, which can be attributed to the presence of vacancies and atom clusters and lattice misfit defects. For Tgr > 515 °C, the InGaAs/GaAs interfaces show significant roughness due to In segregation. Rapid thermal annealing grades the InGaAs/GaAs interface because of interdiffusion of group-III atoms at the interface, and removes most of the non-radiative recombination centers from the low Tgr (<515 °C) samples. In addition, we observed that the interfacial quality of the InGaAs/GaAs quantum well shows no strong dependence on (100) vicinal orientations of GaAs substrate.

Strained-layer quantum well heterostructure lasers

1992 ◽  
Vol 216 (1) ◽  
pp. 68-71 ◽  
Author(s):  
J.J. Coleman
Keyword(s):  
Quantum Well ◽  
Strained Layer

Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers

1985 ◽  
Vol 57 (1) ◽  
pp. 33-38 ◽  
Author(s):  
W. D. Laidig ◽  
Y. F. Lin ◽  
P. J. Caldwell
Keyword(s):  
Quantum Well ◽  
Strained Layer ◽  
Injection Lasers

High-power 0.98-μm strained-layer quantum-well lasers with InGaP cladding

1994 ◽  
Vol 7 (3) ◽  
pp. 139-143 ◽  
Author(s):  
Tetsuro Ijichi ◽  
Michio Ohkubo ◽  
Akira Iketani ◽  
Toshio Kikuta
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Strained Layer

Measurement of band offset of a strained‐layer single quantum well by a capacitance‐voltage technique

1993 ◽  
Vol 74 (12) ◽  
pp. 7618-7620 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
G. Fernandes ◽  
S. Banerjee
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Capacitance Voltage

scholarly journals Analytical Models of Bulk and Quantum Well Solar Cells and Relevance of the Radiative Limit

2012 ◽  
pp. 59-77 ◽  
Author(s):  
James P. Connolly
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Space Charge ◽  
Radiative Recombination ◽  
Light Trapping ◽  
Open Circuit ◽  
Analytical Models ◽  
Injection Currents ◽  
Photon Recycling ◽  
Open Circuit Voltages

The analytical modelling of bulk and quantum well solar cells is reviewed. The analytical approach allows explicit estimates of dominant generation and recombination mechanisms at work in charge neutral and space charge layers of the cells. Consistency of the analysis of cell characteristics in the light and in the dark leaves a single free parameter, which is the mean Shockley-Read-Hall lifetime. Bulk PIN cells are shown to be inherently dominated by non-radiative recombination as a result of the doping related non-radiative fraction of the Shockley injection currents. Quantum well PIN solar cells on the other hand are shown to operate in the radiative limit as a result of the dominance of radiative recombination in the space charge region. These features are exploited using light trapping techniques leading to photon recycling and reduced radiative recombination. The conclusion is that the mirror backed quantum well solar cell device features open circuit voltages determined mainly by the higher bandgap neutral layers, with an absorption threshold determined by the lower gap quantum well superlattice.

Sign in / Sign up

Export Citation Format

Share Document