Photoluminescence study of radiative recombination in porous silicon

1993 ◽  
Vol 62 (21) ◽  
pp. 2676-2678 ◽  
Author(s):  
C. Wang ◽  
J. M. Perz ◽  
F. Gaspari ◽  
M. Plumb ◽  
S. Zukotynski
Keyword(s):  
Porous Silicon ◽  
Radiative Recombination ◽  
Photoluminescence Study

Photoluminescence Study of Radiative Recombination in Porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
Chun Wang ◽  
Franco Gaspari ◽  
Stefan Zukotynski
Keyword(s):  
Porous Silicon ◽  
Excited States ◽  
Ground State ◽  
Radiative Recombination ◽  
Single Electron ◽  
Photoluminescence Study ◽  
Recombination Centre ◽  
Electron Center ◽  
Recombination Centers

AbstractPhotoluminescence has been studied in porous silicon. Two types of radiative recombination centers have been identified. One gives rise to luminescence at about 820 nm and is believed to be related to Si-H bonds. The second gives rise to luminescence at about 770 nm and is likely associated with S-O bonds. Above about 20K radiative recombination is assisted by excited states of the recombination centre located about 10 meV above the ground state. The Si-H recombination centre is a single electron center whereas the Si-O center appears to be a multi-electron center.

Drying of porous silicon: a Raman, electron microscopy, and photoluminescence study

1996 ◽  
Vol 276 (1-2) ◽  
pp. 204-207 ◽  
Author(s):  
G Amato ◽  
V Bullara ◽  
N Brunetto ◽  
L Boarino
Keyword(s):  
Electron Microscopy ◽  
Porous Silicon ◽  
Photoluminescence Study

scholarly journals Raman scattering and photoluminescence study of porous silicon formed on n-type silicon

1994 ◽  
Vol 17 (5) ◽  
pp. 505-511
Author(s):  
S K Deb ◽  
Neelu Mathur ◽  
A P Roy ◽  
S Banerjee ◽  
A Sardesai
Keyword(s):  
Porous Silicon ◽  
Raman Scattering ◽  
Photoluminescence Study ◽  
Type Silicon

In situ FT-IR and photoluminescence study of porous silicon during exposure to F2, H2O, and D2O

1999 ◽  
Vol 427-428 ◽  
pp. 304-308 ◽  
Author(s):  
T. Arigane ◽  
K. Yoshida ◽  
T. Wadayama ◽  
A. Hatta
Keyword(s):  
Porous Silicon ◽  
Photoluminescence Study ◽  
Ft Ir

A model of radiative recombination in n-type porous silicon–aluminum Schottky junction

1999 ◽  
Vol 74 (14) ◽  
pp. 1960-1962 ◽  
Author(s):  
M. Balucani ◽  
V. Bondarenko ◽  
L. Franchina ◽  
G. Lamedica ◽  
V. A. Yakovtseva ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Radiative Recombination ◽  
Schottky Junction

The Origin Of Light Emission From Porous Silicon

1997 ◽  
Vol 486 ◽  
Author(s):  
M. Ben-Chorin ◽  
H. Heckler ◽  
D. Kovalev ◽  
B. Averboukh ◽  
G. Polisski ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Radiative Recombination ◽  
Light Emission ◽  
Hole Burning ◽  
Si Nanocrystals ◽  
Quantum Confined ◽  
Viable Model

AbstractWe report on luminescence hole burning experiments, which prove that radiative recombination between quantum confined states is the only viable model for the mechanism of the light emission from porous silicon. We find that more than 90% of the luminescence originates from quantum confined states inside the Si nanocrystals.

Time-resolved photoluminescence study of stabilised iron–porous silicon nanocomposites

2010 ◽  
Vol 506 (2) ◽  
pp. 496-499 ◽  
Author(s):  
M. Rahmani ◽  
H. Ajlani ◽  
A. Moadhen ◽  
M.-A. Zaïbi ◽  
L. Haji ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

Radiative Recombination Mechanisms in Porous Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
S. Gardelis ◽  
B. Hamilton ◽  
R. A. Kubiak ◽  
T. E Whall ◽  
E. C. H. Parker
Keyword(s):  
Thermal Stability ◽  
Porous Silicon ◽  
Thermal Behaviour ◽  
Radiative Recombination ◽  
Random Potential ◽  
Optical Transitions ◽  
Transition Energies ◽  
Material Systems ◽  
Spectral Behaviour ◽  
Line Widths

ABSTRACTThis paper attempts to address the question of the role played by dimensionality in the observed optical transitions of porus silicon and related material systems. The effect of the degree of porosity on the transition energies, line widths and thermal stability. In addition more subtle effects observed in the thermal behaviour of the spectra which may relate to carrier trapping in a random potential of an imperfect localised system are reported. Comparisons with the spectral behaviour which would be predicted by quantum scale confinement of electronic particles are made.

Theory of the Physical Properties of Si Nanocrystals

1994 ◽  
Vol 358 ◽  
Author(s):  
M. Lannoo ◽  
C. Delerue ◽  
G. Allan ◽  
E. Martin
Keyword(s):  
Porous Silicon ◽  
Radiative Recombination ◽  
Surface Defects ◽  
Stokes Shift ◽  
Optical Excitation ◽  
Recombination Time ◽  
Si Nanocrystals ◽  
Donor And Acceptor ◽  
Electron Hole Pair ◽  
Level Of Understanding

ABSTRACTThis paper reviews calculations concerning several aspects of silicon crystallites and their relevance for porous silicon. This begins with the optical properties of perfect crystallites: gap versus size, radiative recombination time, relative importance of phonon assisted transitions. A second part is devoted to the determination of the excitonic exchange splitting and of the Stokes shift which are found to bring a similar contribution (∼10 to 20 meV). The effect of surface defects like dangling bonds is then investigated with their contribution to the recombination time. The Auger non radiative recombination time is also calculated and found to be short (∼1 nsec). This is confirmed by some experiments on porous silicon which show a saturation effect of the photoluminescence under intense optical excitation or under cathodic polarization in aqueous solution, Auger recombination preventing the existence of more than one electron-hole pair per crystallite. Donor and acceptor impurities are studied in detail (screening of Coulomb potential, notion of ionization energy) with the conclusion that they are ionized. A final discussion shows the present level of understanding and identifies problems remaining to be solved.

White Light Luminescence from Nano-ZnS Doped Porous Silicon

2001 ◽  
Vol 686 ◽  
Author(s):  
K. W. Cheah ◽  
Ling Xu ◽  
Xinfan Huang
Keyword(s):  
Porous Silicon ◽  
White Light ◽  
Radiative Recombination ◽  
Surface States ◽  
Silicon Layer ◽  
Visible Spectrum ◽  
Porous Silicon Layer ◽  
Time Resolved ◽  
Direct Excitation ◽  
Time Resolved Photoluminescence

Nano-ZnS was deposited into porous silicon. By varying the concentration of Zn2+ ion solution during nano-ZnS formation, the amount of nano-ZnS in porous silicon host can be controlled. The doped porous silicon exhibited a gradual shift in its photoluminescence peak from red to blue as a function of the nano-ZnS coverage. At an optimum doping, white light photoluminescence was obtained. A study in the luminescence lifetime showed that the radiative recombination at the blue end of the visible spectrum was due to nano-ZnS, whereas, luminescence emission at the red end of the visible spectrum came from porous silicon. The latter luminescence was due to in part tunneling of excited electrons from nanoZnS into porous silicon and in part direct excitation of porous silicon layer. Time-resolved photoluminescence also showed that radiative recombination was effectively dominated by the nano-ZnS. Photoluminescence excitation result revealed the presence of two excitation levels; one belonged to nano-ZnS at near uv region, and another at about 520 nm from the surface states of porous silicon and nano-ZnS. The doping of nano-ZnS into porous silicon demonstrates that luminescence color tuning is possible when an appropriate functional material is introduced into porous silicon.

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