scholarly journals Raman scattering and photoluminescence study of porous silicon formed on n-type silicon

1994 ◽  
Vol 17 (5) ◽  
pp. 505-511
Author(s):  
S K Deb ◽  
Neelu Mathur ◽  
A P Roy ◽  
S Banerjee ◽  
A Sardesai
1995 ◽  
Vol 255 (1-2) ◽  
pp. 139-142 ◽  
Author(s):  
I. Gregora ◽  
B. Champagnon ◽  
L. Saviot ◽  
Y. Monin

1994 ◽  
Author(s):  
Leonid A. Golovan ◽  
Andrei V. Zoteyev ◽  
Pavel K. Kashkarov ◽  
Viktor Y. Timoshenko

2019 ◽  
Vol 9 (22) ◽  
pp. 4806 ◽  
Author(s):  
Ibrahim Khalil ◽  
Chia-Man Chou ◽  
Kun-Lin Tsai ◽  
Steven Hsu ◽  
Wageeh A. Yehye ◽  
...  

Metallic film-coated porous silicon (PSi) has been reported as a lucrative surface-enhanced Raman scattering (SERS) substrate. The solution-based fabrication process is facile and easy; however, it requires additional reducing agent and extra chemical treatment, as well as hinders the suitability as a reproducible SERS substrate due to irregular hot spot generation via irregular deposition of metallic nanocrystallites. To address this issue, we report a unique one-step electronic beam (e-beam) physical vapor deposition (PVD) method to fabricate a consistent layer of gold (Au) nanofilm on PSi. Moreover, to achieve the best output as a SERS substrate, PSi prepared by electrochemical etching was used as template to generate an Au layer of irregular surface, offering the surface roughness feature of the PSi–Au thin film. Furthermore, to investigate the etching role and Au film thickness, Au-nanocrystallites of varying thickness (5, 7, and 10 nm) showing discrete surface morphology were characterized and evaluated for SERS effect using Rhodamine 6G (R6G). The SERS signal of R6G adsorbed on PSi–Au thin film showed a marked enhancement, around three-fold enhancement factor (EF), than the Si–Au thin film. The optimal SERS output was obtained for PSi–Au substrate of 7 nm Au film thickness. This study thus indicates that the SERS enhancement relies on the Au film thickness and the roughness feature of the PSi–Au substrate.


1993 ◽  
Vol 298 ◽  
Author(s):  
Chun Wang ◽  
Franco Gaspari ◽  
Stefan Zukotynski

AbstractPhotoluminescence has been studied in porous silicon. Two types of radiative recombination centers have been identified. One gives rise to luminescence at about 820 nm and is believed to be related to Si-H bonds. The second gives rise to luminescence at about 770 nm and is likely associated with S-O bonds. Above about 20K radiative recombination is assisted by excited states of the recombination centre located about 10 meV above the ground state. The Si-H recombination centre is a single electron center whereas the Si-O center appears to be a multi-electron center.


1997 ◽  
Vol 225 (1-3) ◽  
pp. 170-174 ◽  
Author(s):  
X.L. Wu ◽  
F. Yan ◽  
X.M. Bao ◽  
S. Tong ◽  
G.G. Siu ◽  
...  

2000 ◽  
Vol 638 ◽  
Author(s):  
Carlos Navarro ◽  
Luis F. Fonseca ◽  
Guillermo Nery ◽  
O. Resto ◽  
S. Z. Weisz

AbstractThe maximum photoresponse of a normal silicon photodetector, that uses a p-n junction as the active zone, is obtained when the incident radiation wavelength is around 750nm. This response diminishes significantly when the incident radiation is near or in the UV region. Meanwhile, nanocrystalline silicon (nc-Si) films with high transparency above 650nm and high absorbance in the UV can be prepared. By quantum confinement effects, a fraction of this absorbed UV energy is re-emitted as visible photons that can be used by the junction. We study the enhancement of the UV-photoresponse of two silicon detector prototypes with a silicon p-n junction active zone and with a photoluminescent nc-Si overlayer. One prototype is made with a porous silicon/n-type silicon/p-type silicon/p++-silicon/metal configuration and the other with an Eu-doped Si-SiO2 overlayer instead of the porous silicon one. The comparison between both prototypes and the control is presented and discussed stressing on the enhancement effect introduced by the photoluminescent overlayers, stability and reproducibility.


Author(s):  
M. A. FERRARA ◽  
L. SIRLETO ◽  
L. MORETTI ◽  
I. RENDINA ◽  
A. M. ROSSI ◽  
...  

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